文献类型：专利

英文题名：Plasma resonance light scattering response nanometer hole chip manufacturing method, involves selecting chip base material, and coating small holes by target material to obtain nanometer hole chip surface with thickness of about specific nm

作者：GU Z;LI M;LONG Y;ZHOU H;YING D

机构：[1]UNIV EAST CHINA SCI & TECHNOLOGY

申请号：CN103512869-A

申请日：2013-10-11

公开日：2014-01-15

语种：英文

收录：DERWENT

摘要：NOVELTY - The method involves selecting chip base material. A back side of a silicon wafer is fixed with an insulating material, where the insulating material is silicon nitride, aluminum oxide or silicon dioxide. A single chip is prepared by shadow evaporation and wet etching process. The silicon wafer is etched until insulating material layer square area is removed to obtain a nanometer hole chip thin film. A target material is sputtered. Nanometer small holes are coated by the target material for 5-30 minutes to obtain a nanometer hole chip surface with thickness of about 10-50 nm. USE - Method for manufacturing a plasma resonance light scattering response nanometer hole chip. ADVANTAGE - The method enables ensuring simple operating steps and low processing cost. The method enables generating plasma in coupling resonance by a nanometer hole chip so as to achieve amplified effect on a spectrum signal. DETAILED DESCRIPTION - The target material is gold, silver or copper. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram illustrating a plasma resonance light scattering response nanometer hole chip manufacturing method.'(Drawing includes non-English language text)'