文献类型：期刊文献

英文题名：Properties of Dy³⁺-doped Ge-As-Ga-Se chalcogenide glasses

作者：Ren Jing; Yang Guang; Zeng Huidan; Zhang Xianghua; Yang Yunxia; Chen Guorong

机构：[1]E China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Ultrafine Mat, Minist Educ, Shanghai 200237, Peoples R China

年份：2006

卷号：89

期号：8

起止页码：2486

外文期刊名：JOURNAL OF THE AMERICAN CERAMIC SOCIETY

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000239005900019)】；

语种：英文

摘要：In the present work, properties of Dy3+-doped chalcogenide glasses as a stoichiometric formula of (0.9-x)GeSe2-xAsSe(3/2)-0.1GaSe(3/2) (x=0.1, 0.2, 0.3, 0.4, 0.5, 0.6) were investigated as a comparison with the previously studied Ge-Ga-Se system. Property measurements include differential thermal analysis, density, Vis-NIR and IR transmission spectra, and fluorescent emission spectra. Judd-Ofelt analysis was performed using the calculated oscillator strengths of glasses. All properties of glasses show obvious dependence on compositions. Especially, the improved devitrification resistance and the longer fluorescence life at 1.34 mu m emission were observed with the increasing As content. Noticeably, abnormal changes in some properties occurred to the glass whose average coordination number corresponds to the threshold of two-dimensional-three-dimensional topological phase transition.