文献类型：期刊文献

英文题名：Electrically Controlled Quantum Memories With a Cavity and Electro-Mechanical System

作者：Qin, Li-Guo[1];Wang, Zhong-Yang[1];Lin, Gong-Wei[2];Zhao, Jing-Yun[1];Gong, Shang-Qing[2]

机构：[1]Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China;[2]East China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China

年份：2016

卷号：52

期号：3

外文期刊名：IEEE JOURNAL OF QUANTUM ELECTRONICS

收录：;EI(收录号：20161402190796);WOS:【SCI-EXPANDED(收录号:WOS:000389709400001)】；

基金：This work was supported in part by the Hundred Talents Program within the Chinese Academy of Sciences under Grant Y321311401, in part by the Strategic Priority Research Program within the Chinese Academy of Sciences under Grant XDB01010200, and in part by the National Natural Science Foundation of China under Grant 11347147, Grant 11204080, Grant 11547035, and Grant 91321101.

语种：英文

外文关键词：Quantum memory; cavity induced transparency; cavity and electro-mechanical system

摘要：In this paper, we propose a scheme to realize electrically controlled quantum memories in a cavity and electromechanical system. By assisting with a constant weak optical field into the high-Q cavity, the electrical manipulations of the dark-state polariton and the group velocity of light are derived. The storage and retrieval of the photon state can be realized and optimized by sending the optimal voltage waveforms in the electric circuit, respectively. In addition, the storage efficiency and the experimental feasibility are discussed. The cavity-induced quantum memory scheme driven by the electric field here has potential applications in future integration and miniaturization of optical information processing devices.