文献类型：期刊文献

英文题名：Adjustable Plane Curvature of Covalent Organic Framework Enabling Outstanding Dielectric, Electret, and High-Temperature Processing Properties

作者：Chen, Donglin[1];Li, Jinpeng[1];Mei, Xudong[2];Liu, Xiaoyun[1];Zuo, Peiyuan[1];Qiu, Xunlin[2];Zhuang, Qixin[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Adv Polymer Mat Shanghai, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai 200237, Peoples R China

年份：2023

卷号：62

期号：51

外文期刊名：ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

收录：;EI(收录号：20234715094274);WOS:【SCI-EXPANDED(收录号:WOS:001105748800001)】；

基金：All authors are grateful for financial support from the National Natural Science Foundation of China (52073091, 52303083, 52373073, 2171086), Shanghai Pujiang Program (22PJ1402500), Shanghai Rising-Star Program (21QA1403900) and the Key Laboratory of Advanced Polymer Materials of Shanghai.

语种：英文

外文关键词：Charge Storage Capacity; Covalent Organic Framework Films; High Hydrophobicity; Ultra-Low Dielectric Constant

摘要：With the rapid development of integrated circuits towards miniaturization and complexity, there is an urgent need for materials with low dielectric constant/loss and high processing temperatures to effectively prevent signal delay and crosstalk. With high porosity, thermal stability, and easy structural modulation, covalent organic frameworks have great potential in the field of low dielectric materials. However, the optimization of dielectric properties by modulating the conjugated/plane curvature structure of covalent organic frameworks (COFs) has rarely been reported. Accordingly, we herein innovatively prepare COF films with adjustable planar curvature, hence possessing ultralow dielectric constant (1.9 at 1 kHz), ultralow dielectric loss at 1 kHz (0.0029 at room temperature, 0.0052 at 200 degrees C), high thermal decomposition temperature (5 % weight loss temperature, 473 degrees C) and good hydrophobicity (water contact angle, 105.3 degrees). Also, to the best of our knowledge, we are the first to report that the resulting COF film enables high surface potential (approximate to 320 V) for one week, attributing to its intrinsic high porosity, thus presenting great potential in electret applications. Accordingly, this innovative work provides a readily available and scalable idea to prepare materials with comprehensively excellent dielectric and electret properties as well as high processing temperatures simultaneously for advanced electronic device applications. In this manuscript, the microstructure, dielectric, and electret properties of the covalent organic framework films are modulated by adjusting the ratio of 4,4-diamino biphenyl and 4,4-diaminodiphenylmethane. The resulting films present excellent dielectric properties (ultralow dielectric constant (1.9), ultralow dielectric loss (0.0052) at 200 degrees C) and are very promising for use in electronic devices serving in high-temperature environments.image