文献类型：期刊文献

英文题名：Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks

作者：Li, Shizheng[1];Yang, Ning[1];Yuan, Xiao[1];Liu, Cui[1];Ye, Xiaojun[1];Li, Hongbo[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China

年份：2018

卷号：83

起止页码：171

外文期刊名：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录：;EI(收录号：20182005189350);WOS:【SCI-EXPANDED(收录号:WOS:000433236200024)】；

基金：This work was supported by the Shanghai Municipal Project (17DZ1201102), Shanghai Municipal Project (16DZ1203300).

语种：英文

外文关键词：Atomic Layer Deposition; Al2O3; Hydrogen content; Passivation performance; SiO2 capping layer

摘要：Atomic layer deposited (ALD) Al2O3 films shows significant passivation effect on crystalline silicon (c-Si) wafers. We study the effect of hydrogen content in ALD Al2O3 films and the stacks of ALD Al2O3 and SiO2 deposited by electron beam evaporation on the quality of surface passivation. Al2O3 /SiO2 stacks show preferable passivation performance and thermal stability to the single Al2O3 passivation films for the higher hydrogen content at the Al2O3 /Si interface. Effective minority carrier lifetime (tau(eff)) of c-Si wafer passivated by Al2O3 /SiO2 stacks is 3130 mu s much higher than that 1886 mu s in the case of using single Al2O3 film. Hydrogen at the interface contributes obviously to the improvement in passivation performance, and this effect is mainly affected by annealing temperature. The reduction of hydrogen content results in the increasing of interface defect density, degrading the passivation quality. SiO2 capping layer can be considered as a resistance to reduce the escape of hydrogen. Furthermore, annealing time makes little impact on the hydrogen content at the interface as well as the surface passivation performance.