文献类型：期刊文献

英文题名：Restrain recombination by spraying pyrolysis TiO2 on NiO film for quinoxaline-based p-type dye-sensitized solar cells

作者：Yu, Ying[1];Li, Xing[1];Shen, Zhongjin[1];Zhang, Xiaoyu[1];Liu, Peng[2];Gao, Yuting[1];Jiang, Tao[1];Hua, Jianli[1]

机构：[1]East China Univ Sci & Technol, Key Lab Adv Mat, Inst Fine Chem, Sch Chem & Mol Engn, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]KTH Royal Inst Technol, Appl Phys Chem, Ctr Mol Devices, Dept Chem,Sch Chem Sci & Engn, SE-10044 Stockholm, Sweden

年份：2017

卷号：490

起止页码：380

外文期刊名：JOURNAL OF COLLOID AND INTERFACE SCIENCE

收录：;EI(收录号：20164903090551);WOS:【SCI-EXPANDED(收录号:WOS:000393148300044)】；

基金：For financial support of this research; we thank the NSFC/China (21421004; 21172073; 21372082; 21572062 and 91233207).

语种：英文

外文关键词：p-type DSSCs; Quinoxaline; Sensitizer; TiO2 barrier layer

摘要：In this work, we reported two new quinoxaline-based sensitizers (BQI and BQII) for p-type dye-sensitized solar cells (p-DSSCs) featuring carboxylic acid and pyridine as anchoring groups, respectively, in combination with triphenylamine donor. The optical, electrochemical and photovoltaic properties of BQI and BQII were investigated. Results showed that BQI-based p-DSSC with carboxylic acid anchoring group obtained higher photoelectric conversion efficiency (PCE) of 0.140%. To further optimize the device performance, we added a layer of TiO2 on the surface of NiO film as a barrier layer, which contributed to the improvement of the photocurrent density from 3.00 to 3.84 mA cm(-2). The p-DSSCs based on BQI reached the PCE of 0.20% at an irradiance of 100 mW cm(-2) simulated AM1.5 sunlight. Electrochemical impedance spectroscopy (EIS) analysis indicated that the hole recombination resistance of p-DSSCs with TiO2 barrier layer was larger than that of the naked NiO film. Meanwhile, the surface profile of TiO2 on NiO film was verified by scanning electron microscope (SEM), X-ray diffraction (XRD) and the time of flight-secondary ion mass spectrometry (TOF-SIMS). (C) 2016 Elsevier Inc. All rights reserved.