详细信息

Facile in situ fabrication of porous NiO@SnO2 heterostructures: synergistic effects of p-n junction and oxygen vacancies for ultrafast hydrogen sensing  ( EI收录)  

文献类型:期刊文献

英文题名:Facile in situ fabrication of porous NiO@SnO2 heterostructures: synergistic effects of p-n junction and oxygen vacancies for ultrafast hydrogen sensing

作者:Zhu, Ye[1]; Hou, Ming[1]; Yang, Li[1]; Zhao, Qiuni[1]; Ye, Xiaolei[1]; Zhang, Shunping[2]; Xia, Yi[1]; Zhang, Guozhu[3]; Guo, Shenghui[1]

机构:[1] State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, School of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; [2] School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 530074, China; [3] School of Mechanical and Power Engineering, Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, China

年份:2025

外文期刊名:SSRN

收录:EI(收录号:20250567298)

语种:英文

外文关键词:Chemical sensors - Gas adsorption - Gas engineering - Heterojunctions - Hydrogen - Nickel oxide

摘要:A facile microwave-hydrothermal route was developed to fabricate porous NiO@SnO2 heterostructures with SnO2 nanoparticles embedded in NiO sheets. The optimized NiO@SnO2-2 (NiO:SnO2=1:2) exhibits outstanding H2 sensing performance at 300 °C, including a 10 s response to 9000 ppm H2, a high response of 90, excellent selectivity and stability. This enhanced performance stems from the synergistic effect of the p–n heterojunction and oxygen vacancies: the heterojunction enlarges the depletion layer while oxygen vacancies promote oxygen adsorption. Upon H2 exposure, reduction of adsorbed oxygen releases electrons, modulating sensor resistance. This work provides an effective strategy for developing high-performance gas sensors via heterointerface engineering. ? 2025, The Authors. All rights reserved.

参考文献:

正在载入数据...

版权所有©华东理工大学 重庆维普资讯有限公司 渝B2-20050021-7 
渝公网安备 50019002500408号 违法和不良信息举报中心