文献类型：期刊文献

英文题名：Enhancing the PMMA Photoresist Film via Ozone Treatment and Vapor Phase Infiltration

作者：Wang, Mingxi[1];Yu, Miaojie[4];Guan, Nan[2,3];Wu, Yue[1];Zhu, Weihong[4];Wu, Yanqing[5];Zhu, Shijie[5];Tai, Renzhong[5];Zhao, Jun[5];Xu, Yisheng[1,4]

机构：[1]East China Univ Sci & Technol, Sch Chem Engn, State Key Lab Green Chem Engn & Ind Catalysis, State Key Lab Chem Engn, Shanghai 200237, Peoples R China;[2]Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China;[3]Univ Chinese Acad Sci, Beijing 100049, Peoples R China;[4]East China Univ Sci & Technol, Inst Chem, Ctr Photosensit Chem Engn, Sch Chem & Mol Engn, Shanghai 200237, Peoples R China;[5]Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China

年份：2025

卷号：7

期号：10

起止页码：6542

外文期刊名：ACS APPLIED POLYMER MATERIALS

收录：;EI(收录号：20251918398265);WOS:【SCI-EXPANDED(收录号:WOS:001481921000001)】；

基金：This work was performed at the SSRF XIL beamline (BL08U1B). This work was financially supported by the National Natural Science Foundation (no. 92461315), the Shanghai Science and Technology Innovation Action Plan (22501100500, 24JD1402900), the Shanghai Pujiang Program (2022PJD016), and the National Key R&D Program of China (2021YFA1601003, 2021YFA1601002). This work was also supported by the User Experiment Assist System of Shanghai Synchrotron Radiation Facility (SSRF) and Photon Science Research Center for Carbon Dioxide.

语种：英文

外文关键词：EUV lithography; photoresist; vaporphase infiltration; poly(methyl methacrylate); hafniumoxide; electronbeam lithography

摘要：Achieving photoresists that combine low film thickness and high etch resistance while maintaining high resolution presents a challenging contradiction. Doping a poly(methyl methacrylate) (PMMA) film with metal oxide was demonstrated to provide better etch performance, but the line roughness was significantly scarified. Herein, we report an efficient PMMA surface treatment followed by vapor phase infiltration (VPI) for greatly improved deposition of hafnium oxide (HfO x ). By treating PMMA with ozone and infiltrating it with tetrakis(dimethylamino)hafnium (TDMAH), a hybrid photoresist achieving 30 nm half-pitch (HP) resolution under extreme ultraviolet lithography (EUVL) (74 mJ/cm2) with enhanced etch resistance (>120% improvement) and reduced line edge roughness (LER < 10 nm) was realized. This approach provides a viable solution for next-generation lithography by enabling thinner resists without compromising plasma etch resistance, which is critical for advanced semiconductor manufacturing.