详细信息
Growth and atomic oxygen erosion resistance of Al2O3-doped TiO2 thin film formed on polyimide by atomic layer deposition ( SCI-EXPANDED收录 EI收录)
文献类型:期刊文献
英文题名:Growth and atomic oxygen erosion resistance of Al2O3-doped TiO2 thin film formed on polyimide by atomic layer deposition
作者:Yan, Chi[1];Li, Jialin[1];Wang, Haobo[1];Tong, Hua[1];Ye, Xiaojun[1];Wang, Kai[2];Yuan, Xiao[1];Liu, Cui[1];Li, Hongbo[1]
机构:[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Donghua Univ, Coll Text, Shanghai 201620, Peoples R China
年份:2024
卷号:14
期号:47
起止页码:34833
外文期刊名:RSC ADVANCES
收录:;EI(收录号:20244717382568);WOS:【SCI-EXPANDED(收录号:WOS:001348483300001)】;
基金:This research is supported by two sources: the Central Government Guiding Local Project of the Department of Science and Technology of Tibet Autonomous Region [Grant No. XZ202301YD0025C] and the Science and Technology Commission of Shanghai Municipality, China [Grant No. ZJ2022-ZD-010]. The authors extend their gratitude to Shiyanjia Lab (https://www.shiyanjia.com) for providing invaluable assistance with the morphology and XPS analysis. The authors thank the Optorun Semiconductor System Corporation for its support in the atomic layer deposition experiment.
语种:英文
外文关键词:Aluminum coatings - Aluminum oxide - Atomic layer deposition - Ultrathin films
摘要:Polyimide (PI) coated with atomic layer deposition (ALD) thin films shows promising potential for applications in extreme environments. To achieve a high quality ultrathin ALD coating on the PI surface, Al-doped ALD-TiO2 (ATO) films were deposited on the alkaline hydrothermally activated PI surfaces. The nucleation and growth of ATO films were studied by XPS monitoring and SEM observation. The incorporation of aluminum introduced additional active sites that acted as a seed layer, promoting the adsorption and growth of titanium oxide. This effectively compensated for the defects in the TiO2 film, resulting in the formation of a continuously growing conformal film on the PI surface. After 200 ALD cycles, the ATO film deposited on PI exhibits excellent water vapor barrier properties and significant resistance to atomic oxygen (AO) erosion. When exposed to an AO flux of 1.4 x 1022 atom per cm2, the erosion yield of the PI coated with 200 ALD cycles of ATO film was as low as 2.4 x 10-26 cm3 per atom, which is two orders less than that of the standard polyimide-ref Kapton (R) film.
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