文献类型：期刊文献

中文题名：Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

作者：Ling Tong[1];Xiaojiao Guo[1];Zhangfeng Shen[2];Lihui Zhou[3];Jingyi Ma[1];Xinyu Chen[1];Honglei Chen[1];Yin Xia[1];Chuming Sheng[1];Saifei Gou[1];Die Wang[1];Xinyu Wang[1];Xiangqi Dong[1];Yuxuan Zhu[1];Xinzhi Zhang[4];David Wei Zhang[1];Sheng Dai[3];Xi Li[2];Peng Zhou[1];Yangang Wang[2];Wenzhong Bao[1]

机构：[1]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China;[2]College of Biological,Chemical Science and Engineering,Jiaxing University,Jiaxing 314001,China;[3]Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center,Institute of Fine Chemicals,School of Chemistry&Molecular Engineering,East China University of Science and Technology,Shanghai 200237,China;[4]State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai 200433,China

年份：2023

期号：2

起止页码：230

中文期刊名：Journal of Materials Science & Technology

外文期刊名：材料科学技术（英文版）

收录：CSTPCD;;Scopus;CSCD:【CSCD2023_2024】；PubMed;

基金：support of the National Key Re-search and Development Program(No.2016YFA0203900);the Natural Science Foundation of China(No.51802041);S.Dai ac-knowledges the support of the Shanghai Rising-star Program(No.20QA1402400);the Program for Professor of Special Appoint-ment(Eastern Scholar)at Shanghai Institutions of Higher Learning.

语种：英文

中文关键词：Edge contact;2D materials;Field-effect transistors;Schottky barrier;Contact resistance

摘要：Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic de-vices.However,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains challenging.In this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top contact.After in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted devices.The thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact area.The temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling barrier.Finally,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport mechanism.Our work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.