文献类型：期刊文献

英文题名：KF-Enriched Solid Electrolyte Interface Films Enable ZnSe Nanowires with Enhanced Capacity and Stability for K-Ion Batteries

作者：Yu, Haifeng[1,2];Xu, Da[1];Wang, Haiyan[3];Chen, Ling[1];Jiang, Hao[1,2];Li, Chunzhong[1,2]

机构：[1]East China Univ Sci & Technol, Shanghai Engn Res Ctr Hierarch Nanomat, Sch Chem Engn, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Ultrafine Mat, Minist Educ, Shanghai 200237, Peoples R China;[3]Henan Normal Univ, Sch Chem & Chem Engn, Xinxiang 453007, Henan, Peoples R China

年份：2024

卷号：12

期号：38

起止页码：14342

外文期刊名：ACS SUSTAINABLE CHEMISTRY & ENGINEERING

收录：;EI(收录号：20244117172010);WOS:【SCI-EXPANDED(收录号:WOS:001308682400001)】；

基金：This work was supported by the National Natural Science Foundation of China (22208102), the Chenguang Program of Shanghai Education Development Foundation and Shanghai Municipal Education Commission (22CGA30), and the Fundamental Research Funds for the Central Universities.

语种：英文

外文关键词：ZnSe; solid electrolyte interface; doping; cycle life; potassium-ion batteries

摘要：Solid electrolyte interphase (SEI) films exert a profound impact on the electrochemical performance of metal selenide anodes for potassium-ion batteries (PIBs). However, severe electrolyte decomposition caused by metallic potassium at the discharge state and substantial mechanical stress induced by the large K+ radius limit the stability of the SEI films. In this study, we design Ag-doped ZnSe nanowires using an ion exchange technique, which exhibit a stable interfacial film with superior reaction kinetics. The doped Ag facilitates the decomposition of KPF6 inside the electrolyte, promoting the formation of a KF-enriched SEI layer on the ZnSe surface. A fluoride-rich SEI layer significantly enhances interfacial stability while mitigating the continual loss of electrolyte throughout battery operation. Besides, the incorporation of larger Ag atoms can expand the lattice spacing within ZnSe, thereby augmenting both ionic and electronic conductivity. Therefore, the Ag-doped ZnSe nanowires deliver a high reversible capacity of 435 mAh g(-1) at 0.1 A g(-1) and 152 mAh g(-1) at 5.0 A g(-1), and they demonstrate remarkable cycling durability without attenuation even after 800 cycles at 1.0 and 5.0 A g(-1).