文献类型：期刊文献

英文题名：Unipolar poling-induced high switching speed and improved imprint behaviors for poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

作者：Hou, Ying[1];Lu, Zhaoyue[1,2];Pu, Tiansong[1];Zhang, Yuan[1];Meng, Xiangjian[2];Xu, Haisheng[1,3]

机构：[1]E China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China;[2]Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China;[3]Kunshan Hisense Elect Co Ltd, Kunshan 215300, Jiangsu, Peoples R China

年份：2013

卷号：103

期号：26

外文期刊名：APPLIED PHYSICS LETTERS

收录：;EI(收录号：20140217185574);WOS:【SCI-EXPANDED(收录号:WOS:000329977400078)】；

基金：This work was supported by the National Natural Science Foundation of China (Contract No. 51303053) and the Fundamental Research Funds for the Central Universities (Contract No. 222201314010).

语种：英文

外文关键词：Random access storage - Switching - Ferroelectric films - Fluorine compounds - Ferroelectricity

摘要：The polarization switching and imprint behaviors with different pulse and unipolar poling processes for ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. Compared with results for samples only through the certain protocol we studied previously, the much faster switching speed and lower voltage shift are observed for films with certain protocol as well as certain unipolar poling. The analyses show that these properties are strongly dependent on the directions of the switching and unipolar poling field. The results provide another effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film. (C) 2013 AIP Publishing LLC.