文献类型：期刊文献

英文题名：Gamma ray irradiation induced optical band gap variations in chalcogenide glasses

作者：Xia, Fang[1,2]; Baccaro, S.[2]; Zhao, Donghui[1]; Falconieri, M.[3]; Chen, Guorong[1]

机构：[1]E China Univ Sci & Technol, Key Lab Ultrafine Mat, Minist Educ, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]ENEA, FIS, ION, I-00060 Rome, Italy;[3]ENEA, MAT, NANO, I-00060 Rome, Italy

年份：2005

卷号：234

期号：4

起止页码：525

外文期刊名：NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

收录：;EI(收录号：2005259168145);WOS:【SCI-EXPANDED(收录号:WOS:000230261900015)】；

语种：英文

外文关键词：gamma ray irradiation; optical band gap; chalcogenide glasses; Raman spectra

摘要：In the present work gamma-irradiation induced optical band gap variations (Delta E-opt) were investigated on Ge-As-Se and Ge-As-Se-Te chalcogenide glasses. Higher doses of gamma-irradiation resulted in decreased E-opt, which was composition dependent. Especially, glasses with stoichiometric compositions showed different Delta E-opt from nonstoichiometric glasses under the same irradiation conditions. There seemed existence of a threshold E-opt (TE) under the certain dose of irradiation below which Delta E-opt hardly occurred. Results were interpreted from viewpoint of glass structure, Chemical Bond Approach (CBA) and localized states density theory. Raman analysis supported well these discussions. (c) 2005 Elsevier B.V. All rights reserved.