文献类型：期刊文献

英文题名：Borosiloxane boron diffusion for p-emitter formation on n-type silicon wafers

作者：Sun, Xinjie[1];Tong, Hua[1];Yuan, Xiao[1];Liu, Cui[1];Yuan, Shuanglong[1];Chen, Guorong[1];Yang, Yunxia[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Ultrafine Mat, Shanghai 200237, Peoples R China

年份：2017

卷号：28

期号：16

起止页码：11563

外文期刊名：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录：;EI(收录号：20171703591984);WOS:【SCI-EXPANDED(收录号:WOS:000406196200001)】；

基金：This study was supported by the Shanghai Science and Technology Committee Projects (No.15dz1201102 & No.16dz1203300).

语种：英文

外文关键词：Sheet resistance - Sols - Boron - Light emission - Silicon compounds - Diffusion coatings - Phosphors - Silicon wafers

摘要：Thermal boron diffusion, which forms highly doped and shallow p-emitters on phosphor-doped silicon wafers, is one of the primary processes in commercial-scale production of n-type cells. Here, we report on the use of nontoxic and nonvolatile borosiloxane sols as the spin-on boron source. In comparison to the tribromide (BBr3) boron diffusion that is applied in the production of most commercial n-type cells, borosiloxane boron diffusion may have potential advantages in terms of cost, safety, operability, etc. The borosiloxane sols studied here were formed from a cross-linking reaction between boron acid and a mixture of two types of silicon alkoxides, methyltriethoxysilane (MTEOS) and dimethyldiethoxysilane (DMDEOS). The MTEOS/DMDEOS ratio was found to be the key factor determining the synthetic period, net structure, thermal transformation property, and coating behavior of the borosiloxane sols. In combination with the spin-coating method, the performance of borosiloxane boron diffusion into phosphor-doped silicon wafers (1-3 Omega center dot cm) was systematically investigated by varying the borosiloxane composition (boron/silicon or MTEOS/DMDEOS ratio) and the diffusion process parameters (temperature, ambience, and period of individual sub-steps), and by relating them to the resulting sheet resistance and boron doping profile. The results show that under the diffusion conditions in conventional cell production lines, the formed p-emitters can have variable sheet resistance in the range of 35-582 Omega/a- and boron doping depth of 100-300 nm.