文献类型：期刊文献

英文题名：Furan-Containing Quinoidal Compounds for High-Performance Copper/Silver Electrode-Based n-Channel Organic Transistors

作者：Feng, Yan[1,2]; Li, Hongxiang[1]

机构：[1] Key Laboratory for Advanced Materials, Feringa Nobel Prize Scientist Joint Research Center, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China; [2] Key Laboratory of Resource Chemistry, Ministry of Education, Shanghai Key Laboratory of Rare Earth Functional Materials, Shanghai Normal University, Shanghai, 200234, China

年份：2023

卷号：5

期号：1

起止页码：132

外文期刊名：ACS Applied Electronic Materials

收录：EI(收录号：20225213306088)

语种：英文

外文关键词：Aromatic compounds - Copper - Crystal structure - Electrodes - Electron mobility - Field effect transistors - Molecular orbitals - Organic pollutants - Semiconductor doping - Silver - Single crystals - Substitution reactions - Thin film circuits - Thin film transistors - Thin films

摘要：Furan-containing quinoidal compounds FTzTzF-C10 and FTzTzF-C8 were synthesized. These compounds have low lowest unoccupied molecular orbital (LUMO) energy levels and can form a charge transfer complex with Ag and Cu films, proved by cyclic voltammograms and Raman spectra. Single crystal diffraction results reveal that they adopt a lamellar layer structure with strong π-π interactions in crystals. Thin film transistor characterization shows that FTzTzF-C10 and FTzTzF-C8 exhibit n-channel behavior with an electron mobility of 1.18 cm2 V-1 s-1, one of the highest electron mobilities reported for thin film devices based on furan-containing semiconductors. Notably, the performance of FTzTzF-C10 and FTzTzF-C8 devices is nearly independent of the metals (Au, Cu, and Ag) of source-drain electrodes, which is ascribed to the ultrathin charge transfer layer formed by the spontaneous reaction of FTzTzFs and electrodes (Ag, Cu). These results demonstrate that furan is an excellent block for quinoidal semiconductors and promote the development of Cu/Ag electrode-based organic transistors. ? 2022 American Chemical Society.