文献类型：期刊文献

中文题名：衬底温度对ZnO薄膜晶体结构和电学性质的影响研究

英文题名：Influence of Substrate Temperature on the Structure and Electric Properties of ZnO Films

作者：陆慧[1];阴其俊[1];夏姣贞[1];潘孝任[1]

机构：[1]华东理工大学物理系,上海200237

年份：2005

卷号：18

期号：6

起止页码：1034

中文期刊名：Chinese Journal of Chemical Physics

外文期刊名：化学物理学报（英文）

收录：CSTPCD;;Scopus;北大核心:【北大核心2004】；CSCD:【CSCD2011_2012】；

语种：中文

中文关键词：ZnO薄膜;衬底温度;晶体结构;应力;阻抗谱

外文关键词：ZnO films, Substrate temperature, Structure, Stress, Complex impedance spectroscopy

摘要：由GDARE法在较低温度下,以玻璃为衬底沉积ZnO薄膜,用SEM、AFM、XRD及交流阻抗谱测量等方法研究了衬底温度对薄膜表面形貌、晶体结构以及晶体导电性质的影响.研究结果表明,室温下沉积的薄膜为颗粒致密的非晶相结构,晶界电阻较小.在衬底温度大于50℃时,由GDARE法可沉积出具有一定c轴取向的ZnO薄膜.随衬底温度的升高,薄膜沿c轴择优生长趋势明显增强,内应力减小,晶界效应增强,晶界电阻增大.衬底温度大于100℃后,沿c轴的取向度增强趋势减缓.在衬底温度180～200℃时,可获得高度c轴取向的ZnO超细微粒薄膜,其结晶性能良好,表面光滑,平均粒径30～40nm,晶粒尺寸均匀,晶形规则,沿c轴的内应力很小,取向度达0.965.此时薄膜的晶界效应增强,晶界电阻明显大于室温下沉积的薄膜,而晶粒电阻所占比例很小,总阻抗以晶界电阻为主.同时还讨论了衬底温度对薄膜晶体结构及晶界特性的影响机理.
ZnO films were deposited on glass substrates by gas discharge reaction evaporation. The influences of substrate temperature on the surface morphology, crystal structure and electric properties of ZnO films were studied by scanning electron microscopy, atomic force microscopy, X-ray diffraction spectroscopy and complex impedance spectroscopy. The results show that the films with dense and amorphous structure and lower grain boundary resistance were deposited at room temperature. When the substrate temperature is higher than 50℃, the films with certain c-axis orientation can be deposited. With the increase of the substrate temperature, the preferential orientation of ZnO films along c-axis is augmented, the tensile stress along c-axis orientation decreases and the grain boundary resistance increases in a marked degree. When the substrate temperature is higher than 100℃, the increasing trend of the preferential orientation of ZnO films along c-axis slows down. ZnO films possess high preferential c-axis orientation and best crystalline quality at 180 -200 ℃. These possess a smooth surface, symmetrical grain dimension （ i. e. 30 - 40 nm）, inerratic crystal shape, less tensile stress and 0. 965 epitaxial degree along the c-axis direction. Here the grain boundary effect increases and the grain boundary resistance is evidently more than that of the films deposited at room temperature. The mechanism by which substrate temperature affects crystal structure and grain boundary properties were also discussed.