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The properties of the earth abundant Cu2SnS3 thin film prepared by spray pyrolysis and rapid thermal annealing route  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:The properties of the earth abundant Cu2SnS3 thin film prepared by spray pyrolysis and rapid thermal annealing route

作者:Chen, Qinmiao[1];Jia, Zhen[1];Yuan, Hongcun[2];Zhu, Wei[1];Ni, Yi[1];Zhu, Xifang[2];Dou, Xiaoming[1,3]

机构:[1]East China Univ Sci & Technol, Coll Sci, Dept Phys, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]Changzhou Inst Technol, Sch Optoelect Engn, 229 South Tongjiang Rd, Changzhou 213002, Jiangsu, Peoples R China;[3]Osaka Univ, Grad Sch Engn, Dept Appl Phys, Suita, Osaka 5650871, Japan

年份:2019

卷号:30

期号:5

起止页码:4519

外文期刊名:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录:;EI(收录号:20190706488062);WOS:【SCI-EXPANDED(收录号:WOS:000461168600019)】;

基金:The project was supported by the National Natural Science Foundation (Grant No. 11604097), the Fund of East China University of Science and Technology (Grant No. YK0142119) and the Natural Science Foundation of Jiangsu Province (Grant No. BK20141167).

语种:英文

外文关键词:Film preparation - Scanning electron microscopy - Rapid thermal annealing - Tin compounds - Copper compounds - Crystal structure - Photoelectricity - Spray pyrolysis

摘要:Ternary compound Cu2SnS3 (CTS) was fabricated by simple, low cost and high efficient spray pyrolysis and rapid thermal annealing route. The influences of annealing temperature and annealing duration on the properties of the prepared CTS thin film were investigated in detail. X-ray diffraction spectrometer, Scanning Electron Microscope, UV-Vis-IR spectrophotometer and I-V test system were employed for the analysis of the structural, morphological, optical and photoelectric properties of the prepared CTS thin film, respectively. The characterization results show that the CTS thin film prepared under the optimal annealing condition of 500 degrees C and 15min presents as tetragonal structure with preferential (1,1,2), bandgap value of 1.44eV, crystal grain size of around 80nm and photoelectric conversion efficiency as high as 1.24%.

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