文献类型：期刊文献

英文题名：In-situ Raman monitoring of stress evaluation and reaction in Cu 2O oxide layer

作者：Zheng, Yao-Ting[1]; Xuan, Fu-Zhen[1]; Wang, Zhengdong[1]

机构：[1] Key Laboratory of Pressure System and Safety, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, China

年份：2012

卷号：78

起止页码：11

外文期刊名：Materials Letters

收录：EI(收录号：20122315088079)

语种：英文

外文关键词：Copper - Copper oxides - Metallic films - Atomic force microscopy - Film growth - Oxygen

摘要：A series of in-situ Raman measurements of oxygen reaction on a thin Cu film at 300°C were performed to monitor the oxide layer growth and the stress evolution within this layer. The Raman data revealed a phenomenon of stress relaxation as well as the generation of growth stress. Ex-situ atomic force microscope (AFM) was employed to assess the surface morphology of Cu film before and after the oxygen reaction. 3D nano oxide islands were observed on the oxide surface. A growth model for the oxide layer was proposed based on Stranski-Krastonov epitaxy. This model interpreted the mechanism of stresses relaxation in the oxide layer at nano level. Finally, the oxidation kinetics was analyzed qualitatively in terms of the Raman data. ? 2012 Elsevier B.V. All rights reserved.