文献类型：期刊文献

英文题名：Effect of charge carrier behaviours in LiF-doped bathophenanthroline (LiF:Bphen) on the performance of organic light-emitting diodes

作者：Lu, Zhaoyue[1];Lu, Zheng[1];Xiao, Jing[2]

机构：[1]E China Univ Sci & Technol, Sch Sci, Dept Phys, Shanghai 200237, Peoples R China;[2]Taishan Univ, Phys & Elect Engn Coll, Tai An 271021, Shandong, Peoples R China

年份：2016

卷号：128

起止页码：240

外文期刊名：VACUUM

收录：;EI(收录号：20161602261381);WOS:【SCI-EXPANDED(收录号:WOS:000376052500034)】；

基金：We thank financial support of National Natural Science Foundation of China (11504109&61574098) and Fundamental Research Funds for the Central Universities (222201314022).

语种：英文

外文关键词：Charge carrier behaviour; Doping; Trap; Electron injection; LiF

摘要：Charge carrier behaviours of LiF-doped bathophenanthroline (LiF:Bphen) were investigated by single carrier devices: electron-only and hole-only devices. The results indicate that LiF doped with Bphen has dual roles: increasing current density due to enhanced electron injection and transport; dedeasing current density owing to capture of holes. In electroluminescent (EL) devices, all doped devices show higher luminance and efficiency than the undoped device. Current density and luminance of doped devices are decreased because hole leakage current decreases with LiF doping level. Compared with the undoped device, 5:100 LiF:Bphen-based EL device exhibits an improved current density. For 10:100 LiF:Bphen-based EL device, current density is smaller at lower electrical field but larger at higher electrical field than that of the undoped device. At higher doping level (15:100 LiF:Bphen), smaller current density than the undoped device is observed. The operation voltage can be lowered by optimizing LiF doping level in electron transport layers. (C) 2016 Elsevier Ltd. All rights reserved.