文献类型：期刊文献

英文题名：High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

作者：Mu, Haichuan[1];Zhang, Zhiqiang[1];Zhao, Xiaojing[2];Liu, Feng[2];Wang, Keke[1];Xie, Haifen[1]

机构：[1]E China Univ Sci & Technol, Sch Sci, Dept Phys, Shanghai 200237, Peoples R China;[2]Shanghai Normal Univ, Dept Phys, Shanghai 200234, Peoples R China

年份：2014

卷号：105

期号：3

外文期刊名：APPLIED PHYSICS LETTERS

收录：;EI(收录号：20151300695243);WOS:【SCI-EXPANDED(收录号:WOS:000341152300066)】；

语种：英文

外文关键词：Conductive films - Graphene - II-VI semiconductors - Chemical vapor deposition - Metallic films - Zinc oxide - Atomic layer deposition - Oxide films - Thin films

摘要：Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated. (c) 2014 AIP Publishing LLC.