文献类型：期刊文献

英文题名：Continuous Film Based on Zeolitic Imidazole Framework-8 for an Enhanced Resistive Memory Property

作者：Mao, Xiaojun[1];Qian, Min[1];Xuan, Xiaoyang[1];Gao, Yang[2];Niu, Yueping[1];Gong, Shangqing[1]

机构：[1]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai 200237, Peoples R China

年份：2022

卷号：17

期号：6

外文期刊名：PHYSICAL REVIEW APPLIED

收录：;EI(收录号：20222512256288);WOS:【SCI-EXPANDED(收录号:WOS:000807945500003)】；

基金：ACKNOWLEDGMENTS This work is sponsored by National Natural Science Foundation of China (Grant No. 61804054) , the Key Research Plan of the National Natural Science Foundation of China (Grant No. 12034007) , Natural Science Foun-dation of Shanghai (Grant No. 18ZR1410400) , Shanghai Aerospace Science and Technology Innovation Founda-tion (Grant No. SISP2018) , and the Shanghai Aerospace Science and Technology Innovation Fund (Grant No. SAST2019-067) . There are no conflicts of interest to declare.

语种：英文

外文关键词：Electric fields - Electronic equipment - Nanocomposites - Organometallics - Redox reactions - Thermoelectric equipment - Tin oxides

摘要：Although metal-organic frameworks attract much attention in electronic devices, the discontinuity at and weak interfacial contact with the substrate are still challenging. In this paper, an Ag/(polyethylene glycol + zeolitic imidazole framework-8) @ (polyvinyl alcohol + 2-methylimidazole)/fluorine-doped tin oxide [Ag/(PEG + ZIF8) @ (PVA + 2MIM)/FTO] structured resistive memory is fabricated. The inter-facial contact and active site are enhanced by modifying FTO with (PVA + 2MIM). The continuity of ZIF-8 film is enhanced by compositing PEG. The resistive memory exhibits a lower set voltage of 1.3 V, a higher endurance of more than 140 cycles, and a longer retention time of over 10 000 s, in comparison with control devices of Ag/ZIF-8/FTO and Ag/ZIF-8 @ (PVA + 2MIM)/FTO. The mechanism of the resistive switching behavior is analyzed by conduction models, and explained by redox reactions of the top active electrode to form and rupture conductive filaments under the electric field. This study suggests a facial and general technology for synthesizing a continuous film with strong contact with the substrate, benefiting electronic devices.