文献类型：期刊文献

英文题名：Zn-Cu-In-Se Quantum Dot Solar Cells with a Certified Power Conversion Efficiency of 11.6%

作者：Du, Jun[1];Du, Zhonglin[1];Hu, Jin-Song[3];Pan, Zhenxiao[1];Shen, Qing[4,5];Sung, Jiankun[3];Long, Donghui[2];Dong, Hui[6];Sun, Litao[6];Zhong, Xinhua[1];Wan, Li-Jun[3]

机构：[1]E China Univ Sci & Technol, Inst Appl Chem, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]E China Univ Sci & Technol, Sch Chem Engn, Shanghai 200237, Peoples R China;[3]Univ Chinese Acad Sci, Chinese Acad Sci, Key Lab Mol Nanostruct & Nanotechnol, Inst Chem,Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China;[4]Univ Electrocommun, Dept Engn Sci, Tokyo 1828585, Japan;[5]Japan Sci & Technol Agcy JST, Saitama 3320012, Japan;[6]Southeast Univ, Minist Educ, Key Lab MEMS, SEU FEI Nanop Ctr, Nanjing 210096, Jiangsu, Peoples R China

年份：2016

卷号：138

期号：12

起止页码：4201

外文期刊名：JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

收录：;EI(收录号：20161702305921);WOS:【SCI-EXPANDED(收录号:WOS:000373518800040)】；

基金：This research is supported by the Natural Science Foundation of China (Nos. 21421004, 91433106, 21573249), the Fundamental Research Funds for the Central Universities in China, and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB12020100).

语种：英文

外文关键词：Indium alloys - Photovoltaic effects - Titanium dioxide - Energy gap - Conversion efficiency - Particle size - Nanocrystals - Zinc alloys - Solar power generation - Semiconductor quantum dots

摘要：The enhancement of power conversion efficiency (PCE) and the development of toxic Cd-, Pb-free quantum dots (QDs) are critical for the prosperity of QD-based solar cells. It is known that the properties (such as light harvesting range, band gap alignment, density of trap state defects, etc.) of QD light harvesters play a crucial effect on the photovoltaic performance of QD based solar cells. Herein, high quality similar to 4 nm Cd-, Pb-free Zn-Cu-In-Se alloyed QDs with an absorption onset extending to similar to 1000 nm were developed as effective light harvesters to construct quantum dot sensitized solar cells (QDSCs). Due to the small particle size, the developed QD sensitizer can be efficiently immobilized on TiO2 film electrode in less than 0.5 h. An average PCE of 11.66% and a certified PCE of 11.61% have been demonstrated in the QDSCs based on these Zn-Cu-In-Se-QDs. The remarkably improved photovoltaic performance for Zn-Cu-In-Se QDSCs vs Cu-In-Se QDSCs (11.66% vs 9.54% in PCE) is mainly derived from the higher conduction band edge, which favors the photogenerated electron extraction and results in higher photocurrent, and the alloyed structure of Zn-Cu-In-Se-QD light harvester, which benefits the suppression of charge recombination at photoanode/electrolyte interfaces and thus improves the photovoltage.