文献类型：期刊文献

英文题名：90% yield production of polymer nano-memristor for in-memory computing

作者：Zhang, Bin[1];Chen, Weilin[2];Zeng, Jianmin[3];Fan, Fei[1,2,4];Gu, Junwei[5];Chen, Xinhui[2];Yan, Lin[3];Xie, Guangjun[3];Liu, Shuzhi[4];Yan, Qing[1];Baik, Seung Jae[6];Zhang, Zhi-Guo[7,8];Chen, Weihua[7,8];Hou, Jie[1];El-Khouly, Mohamed E.[9];Zhang, Zhang[3];Liu, Gang[2];Chen, Yu[1]

机构：[1]East China Univ Sci & Technol, Sch Chem & Mol Engn, Feringa Nobel Prize Scientist Joint Res Ctr, Key Lab Adv Mat & Joint Int Res Lab Precis Chem &, Shanghai, Peoples R China;[2]Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai, Peoples R China;[3]Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei, Peoples R China;[4]Shanghai Jiao Tong Univ, Sch Chem & Chem Engn, Shanghai, Peoples R China;[5]Northwestern Polytech Univ, Shaanxi Key Lab Macromol Sci & Technol, Sch Chem & Chem Engn, Xian, Shaanxi, Peoples R China;[6]Hankyong Natl Univ, Sch Elect & Elect Engn, Anseong, Gyeonggi Do, South Korea;[7]Zhengzhou Univ, Green Catalysis Ctr, Zhengzhou, Peoples R China;[8]Zhengzhou Univ, Coll Chem, Zhengzhou, Peoples R China;[9]Egypt Japan Univ Sci & Technol E JUST, Inst Basic & Appl Sci, Alexandria, Egypt

年份：2021

卷号：12

期号：1

外文期刊名：NATURE COMMUNICATIONS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000636879000005)】；

基金：The authors acknowledge the financial supports from the National Natural Science Foundation of China (51961145402, 62004123, 51973061, 61974090, U19A2053, 61722407, 61674049, and 61674153), the National Key R&D Program of China (2017YFB0405600), the Natural Science Foundation of Shanghai (19ZR1474500 and 19ZR1413100), the fellowship of China Postdoctoral Science Foundation (2020M671118), the Shanghai Municipal Science and Technology Major Project (2018SHZDZX03), the State Key Laboratory of ASIC & System, Fudan University (2019KF001), and the Fundamental Research Funds for the Central Universities (50321041918013). The authors also would like to thank Mr. Jian Xu from the Center for Advanced Electronic Materials and Device, Shanghai Jiao Tong University, for preparing the nanoscale memristor devices, thank Dr. Yubin Fu from Technische Universitat Dresden, for conducting molecular simulations, as well as thank Dr. Shanshan Chen from the Chongqing University and Pohang Accelerator Laboratory, Korea, for conducting the GIWAXS measurements.

语种：英文

摘要：Polymer memristors with light weight and mechanical flexibility are preeminent candidates for low-power edge computing paradigms. However, the structural inhomogeneity of most polymers usually leads to random resistive switching characteristics, which lowers the production yield and reliability of nanoscale devices. In this contribution, we report that by adopting the two-dimensional conjugation strategy, a record high 90% production yield of polymer memristors has been achieved with miniaturization and low power potentials. By constructing coplanar macromolecules with 2D conjugated thiophene derivatives to enhance the pi-pi stacking and crystallinity of the thin film, homogeneous switching takes place across the entire polymer layer, with fast responses in 32 ns, D2D variation down to 3.16% similar to 8.29%, production yield approaching 90%, and scalability into 100 nm scale with tiny power consumption of similar to 10(-15) J/bit. The polymer memristor array is capable of acting as both the arithmetic-logic element and multiply-accumulate accelerator for neuromorphic computing tasks.