文献类型：期刊文献

英文题名：Investigation on ElectricalThermal-Stress Failure of GaN HEMTs Under High-Power Microwave-Induced Pulse Injection

作者：Zhang, Yue[1];Huang, Jingwen[2];Zhou, Liang[2];Ma, Xinyu[2];Li, Mingxuan[2]

机构：[1]East China Univ Sci & Technol, Sch Informat Sci & Engn, Shanghai 200237, Peoples R China;[2]Shanghai Jiao Tong Univ, State Key Lab Radio Frequency Heterogeneous Integr, Shanghai 200240, Peoples R China

年份：2026

卷号：73

期号：2

起止页码：953

外文期刊名：IEEE TRANSACTIONS ON ELECTRON DEVICES

收录：;EI(收录号：20255219806810);WOS:【SCI-EXPANDED(收录号:WOS:001649766000001)】；

基金：This work was supported in part by the National Key Research and Development Project under Grant 2023YFB4403802 and in part by the National Natural Science Foundation of China under Grant 62325110 and Grant 62188102.

语种：英文

外文关键词：MODFETs; HEMTs; Logic gates; Gallium nitride; Thermal analysis; Semiconductor device measurement; Pulse measurements; Frequency measurement; Temperature distribution; Power measurement; Electrical-thermal-stress effect; gallium nitride (GaN) high-electron mobility transistors (HEMTs); high-power microwave (HPM); intentional electromagnetic interference (IEMI); thermal accumulation effect

摘要：This article aims to discuss the electrical-thermal-stress effect of three type gallium nitride (GaN) high-electron mobility transistors (HEMTs) under high-power microwave (HPM)-induced pulse injection, where sensitive semiconductor devices are susceptible to be disturbed or even destroyed by intentional electromagnetic interference (IEMI). CG2H40010F, CGH40010F, and CGH35015F, produced by Wolfspeed with identical matching circuits, are measured under HPM-induced pulse injection at 3 GHz with the pulsewidth of 100 ns and a pulse repetition frequency (PRF) of 1kHz. At the threshold powers of 51, 52, and 56 dBm for CG2H40010F, CGH40010F, and CGH35015F, respectively, the peak temperature of three HEMTs is at the same level. Subsequently, the thermal-stress analysis for three HEMTs is investigated with different temperature distributions and various vulnerable regions. Moreover, the thermal accumulation effect is considered with an augment PRF to 5 MHz. Furthermore, electrical breakdown, especially at the rising edge is studied under single and multiple pulse injection. Eventually, crack areas across three GaN HEMTs are examined through experimental characterizations.