文献类型：期刊文献

英文题名：Redox gated polymer memristive processing memory unit

作者：Zhang, Bin[1];Fan, Fei[1];Xue, Wuhong[2,3,4];Liu, Gang[2,3];Fu, Yubin[5,6];Zhuang, Xiaodong[2,5,6];Xu, Xiao-Hong[4];Gu, Junwei[7];Li, Run-Wei[3];Chen, Yu[1]

机构：[1]East China Univ Sci & Technol, Sch Chem & Mol Engn, Inst Appl Chem, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]Shanghai Jiao Tong Univ, Sch Chem & Chem Engn, Shanghai 200240, Peoples R China;[3]Chinese Acad Sci, CAS Key Lab Magnet Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China;[4]Shanxi Normal Univ, Sch Chem & Mat Sci, Minist Educ, Key Lab Magnet Mol & Magnet Informat Mat, Linfen 041004, Shanxi, Peoples R China;[5]Tech Univ Dresden, Ctr Adv Elect Dresden Cfaed, D-01062 Dresden, Germany;[6]Tech Univ Dresden, Dept Chem & Food Chem, D-01062 Dresden, Germany;[7]Northwestern Polytech Univ, Sch Sci, Dept Appl Chem, Shaanxi Key Lab Macromol Sci & Technol, Xian 710072, Shaanxi, Peoples R China

年份：2019

卷号：10

外文期刊名：NATURE COMMUNICATIONS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000458567700002)】；

基金：The authors acknowledge the financial supports from the National Natural Science Foundation of China (51333002, 21404037, 61722407 and 61674153), the National Key R&D Program of China (2017YFB0405604), the Natural Science Foundation of Zhejiang Province (LR17E020001), Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (18CS01), the Chenguang Program (15CG28), and the Pujiang Program (16PJ1402400).

语种：英文

摘要：Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore's Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era. In particular, the integration of multi-functionalities into a single memristor promises an essential strategy of obtaining a highperformance electronic device that satisfies the nowadays increasing demands of data storage and processing. In this contribution, we report a proof-of-concept polymer memristive processing-memory unit that demonstrates programmable information storage and processing capabilities. By introducing redox active moieties of triphenylamine and ferrocene onto the pendants of fluorene skeletons, the conjugated polymer exhibits triple oxidation behavior and interesting memristive switching characteristics. Associated with the unique electrochemical and electrical behavior, the polymer device is capable of executing multilevel memory, decimal arithmetic operations of addition, subtraction, multiplication and division, as well as simple Boolean logic operations.