文献类型：期刊文献

英文题名：Growing Poly(N-vinylcarbazole) from the Surface of Graphene Oxide via RAFT Polymerization

作者：Zhang, Bin[1];Chen, Yu[1];Xu, Liqun[2];Zeng, Longjia[1];He, Ying[3];Kang, En-Tang[2];Zhang, Jinjuan[1]

机构：[1]E China Univ Sci & Technol, Key Lab Adv Mat, Inst Appl Chem, Shanghai 200237, Peoples R China;[2]Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 119260, Singapore;[3]E China Univ Sci & Technol, Mat Res & Anal Ctr, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China

年份：2011

卷号：49

期号：9

起止页码：2043

外文期刊名：JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000288966600013)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (21074034), the Ministry of Education of China (309013), the Fundamental Research Funds for the Central Universities, the Shanghai Municipal Educational Commission for the Shuguang fellowship (08GG10), and the Shanghai Eastern Scholarship.

语种：英文

外文关键词：functionalization of polymers; graphene oxide; nanotechnology; nonvolatile rewritable memory; poly(N-vinyl-carbazole); radical polymerization; reversible addition fragmentation chain transfer (RAFT); synthesis

摘要：A new approach on usage of S-1-dodecyl-S'-(alpha,alpha'-dimethyl-alpha ''-acetic acid)trithiocarbonate (DDAT)-covalently functionalized graphene oxide (GO) as reversible addition fragmentation chain transfer (RAFT) agent for growing of poly(N-vinylcarbazole) (PVK) directly from the surface of GO was described. The PVK polymer covalently grafted onto GO has M-n of 8.05 x 10(3), and a polydispersity of 1.43. The resulting material PVK-GO shows a good solubility in organic solvents when compared to GO, and a significant energy bandgap of similar to 2.49 eV. Bistable electrical switching and nonvolatile rewritable memory effect, with a turn-on voltage of about -1.7 V and an ON/OFF state current ratio in excess of 10(3), are demonstrated in the Al/PVK-GO/ITO structure. (C) 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 49: 2043-2050, 2011