文献类型：期刊文献

中文题名：高比电容量和长寿命的丰富边位MoS2@C/rGO自支撑膜锂离子电池负极

英文题名：Edge-enriched MoS2@C/rGO film as self-standing anodes for high-capacity and long-life lithium-ion batteries

作者：Chen, Ling[1,2];Liu, Yu[3];Deng, Zongnan[2];Jiang, Hao[1,2];Li, Chunzhong[1,2]

机构：[1]East China Univ Sci & Technol, Sch Chem Engn, Minist Educ, Key Lab Ultrafine Mat, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai Engn Res Ctr Hierarch Nanomat, Shanghai 200237, Peoples R China;[3]Sun Yat Sen Univ, Sch Chem Engn & Technol, Guangzhou 510275, Peoples R China

年份：2021

卷号：64

期号：1

起止页码：96

外文期刊名：SCIENCE CHINA-MATERIALS

收录：;EI(收录号：20202308785521);WOS:【SCI-EXPANDED(收录号:WOS:000537042500001)】；

基金：This work was supported by the National Natural Science Foundation of China (21975074 and 21838003), the Basic Research Program of Shanghai (17JC1402300), Shanghai Scientific and Technological Innovation Project (18JC1410500), and the Fundamental Research Funds for the Central Universities (222201718002).

语种：中文

外文关键词：MoS2 nanocrystals; reduced graphene oxide; edges; lithium-ion batteries; self-standing electrode

摘要：Restraining the aggregation and polysulfide dissolution of edge-enriched metal sulfides is of significance for their applications as anode materials of lithium-ion batteries (LIBs) with high capacity and long cycle-life. In this work, we have reported the incorporation of MoS2 nanocrystals into amorphous carbon on the surface of reduced graphene oxide (rGO) by balancing the decomposition rates of phenolic resin (PF)-impregnated ammonium thiomolybdate (ATM), which subsequently forms the MoS2@C/rGO film through redispersion and vacuum filtration. Such structural design effectively avoids the aggregation of MoS2 nanocrystals and Li2S loss, and meanwhile ion enrichment in amorphous carbon and diffusion reinforcement can greatly accelerate the electrochemical reaction kinetics. When applied as the self-standing anode, the MoS2@C/rGO film possesses high reversible capacities of 1164 mA h g(-1) at the current density of 0.2 A g(-1) and 810 mA h g(-1) at 6.4 A g(-1). It also exhibits quite a high capacity retention after 1000 cycles at 3.2 A g(-1). This work develops the formation theory of incorporation structures and promotes their applications in energy storage devices.