文献类型：期刊文献

英文题名：Ion-etching-induced defect engineering toward porous Fe-N-C catalysts for efficient oxygen reduction reaction

作者：Yang, Yong[1];Yang, Kun-Zu[1];Jia, Ling[1];Zhu, Hao-Ning[1];Yuan, Wen-Quan[1];Wei, Ping-Jie[1];Xu, Chao[2];Liu, Jin-Gang[1]

机构：[1]East China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, State Key Lab Chem Engn, Shanghai 200237, Peoples R China

年份：2026

外文期刊名：NEW JOURNAL OF CHEMISTRY

收录：;EI(收录号：20261720593446);WOS:【SCI-EXPANDED(收录号:WOS:001748949800001)】；

基金：This study was financially supported by the National Nature Science Foundation of China (No. 21571062), the Program for Professor of Special Appointment (Eastern Scholar) at the Shanghai Institutions of Higher Learning to J. G. L., and the Fundamental Research Funds for the Central Universities (No. 222201717003).

语种：英文

外文关键词：Catalyst activity - Defect engineering - Doping (additives) - Electrocatalysts - Energy conversion - Etching - Ions - Iron - Oxygen - Oxygen reduction reaction

摘要：Fe-N-C catalysts are considered as the most promising candidates to replace Pt-based materials for the oxygen reduction reaction (ORR) in energy conversion devices. Defect engineering is a facile and effective strategy to boost ORR activity; however, the precise construction of defects remains challenging. Here, the ion-etching method was employed to create ZIF-derived defect-rich porous nitrogen-doped carbon (pNC) anchored Fe sites (denoted as d-Fe-N-C) as an efficient electrocatalyst for the ORR, achieving the synergistic optimization of mass transport and intrinsic activity. The catalyst d-Fe-N-C exhibited excellent ORR activity, with a half-wave potential (E1/2) of 0.91 V vs. RHE in 0.1 M KOH, surpassing that of Pt/C (0.86 V). The zinc-air batteries (ZABs) assembled with d-Fe-N-C delivered a peak power density (Pmax) of 186 mW cm-2, superior to commercial Pt/C (127 mW cm-2). This work offers new insights into the rational design of Fe-N-C catalysts using ion-etching-induced defect engineering to achieve high performance for the ORR.