详细信息

First-principles study on the electronic properties and feasibility of photocatalytic water splitting on Z-scheme GaN/MoS2 heterostructure  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:First-principles study on the electronic properties and feasibility of photocatalytic water splitting on Z-scheme GaN/MoS2 heterostructure

作者:Yi, Yuzhi[1];Zhou, Rui[1];Zhuang, Fangfang[1];Ye, Xiaojun[1];Li, Hongbo[1];Hao, Guoqiang[1];Zhang, Rui[2]

机构:[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Shanghai Inst Technol, Sch Chem & Environm Engn, Shanghai 201418, Peoples R China

年份:2024

卷号:190

外文期刊名:JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

收录:;EI(收录号:20241415833650);WOS:【SCI-EXPANDED(收录号:WOS:001218528100001)】;

基金:This work was supported by the National Natural Science Foundation of China (22303031) .

语种:英文

外文关键词:GaN/MoS2 heterostructure; Z-scheme; Photocatalysis; First-principles; OER; 2D materials

摘要:In recent years, van der Waals heterostructures have played a significant role in fields such as photocatalysis, quantum devices, sensors, etc., due to their excellent performance exhibited through synergistic interactions between multiple components and the highly customizable design. Two-dimensional transition metal dichalcogenides, with their highly tunable band structures and excellent electrochemical activity, are well-suited for constructing heterostructures. To investigate the specific electronic and photocatalysis properties of relative heterostructure, GaN/MoS 2 heterostructure is constructed. Through the first-principles calculation, the Z-scheme GaN/MoS 2 heterostructure shows a direct band gap of 0.869 eV. The excellent capability for separating the photogenerated carriers can be inferred from the conduction band offset as high as 1.915 eV and electrostatic potentials E p of 6.361 eV. At pH = 14, oxygen evolution reaction can spontaneously occur under the photocatalytic action of the GaN/MoS 2 heterostructure according to the negative Gibbs differences of -0.514 eV, -3.809 eV, -2.576 eV and -5.718 eV in the four-electron pathways. Therefore, the Z-scheme GaN/MoS 2 heterostructure has great prospects in the application of optoelectronic devices and photocatalysis.

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