文献类型：期刊文献

英文题名：Optimization of Plasma Etching Process for 25:1 High Aspect Ratio Through-Silicon Vias

作者：Li, Mingze[1,2];Li, Shizheng[3];Zeng, Jiaming[2];Huang, Jiahui[2];Li, Yuxuan[1];Liu, Cui[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai, Peoples R China;[2]Nanchang Adv Microfabricat Equipment Inc, New Business Grp, Nanchang, Jiangxi, Peoples R China;[3]Adv Microfabricat Equipment Inc, New Business Grp, Shanghai, Peoples R China

年份：2026

外文期刊名：CONTRIBUTIONS TO PLASMA PHYSICS

收录：;EI(收录号：20262220816731);WOS:【SCI-EXPANDED(收录号:WOS:001778441800001)】；

基金：Financial support for this work was provided by Advanced Micro-Fabrication Equipment Inc. China.

语种：英文

外文关键词：bosch process; dry etch; high aspect ratio; selectivity; TSV

摘要：The advancement of 3D integration technology has driven demand for micro-scale, high aspect ratio (HAR) through-silicon via (TSV) etching, establishing it as a critical semiconductor manufacturing technology. Current 3D stacking implementations typically utilize TSVs with aspect ratios of approximately 10:1. To enable higher-density interconnects in next-generation applications, achieving substantially higher AR TSVs is imperative. However, within the photoresist (PR) mask system, high aspect ratio TSV etching faces challenges of insufficient etch selectivity and PR mask collapse, both of which constrain further aspect ratio scaling. This study proposes an optimization strategy for key process parameters. Through parametric optimization of chamber pressure, source power, and bias power, we achieved significant enhancement in selectivity and completely eliminated PR mask collapse. Ultimately, an aspect ratio of 25:1 was successfully demonstrated on TSVs with a critical dimension (CD) of 3 mu m.