详细信息

Semiconductor nano-crystal lowest unoccupied molecular orbital value and highest occupied molecular orbital value measuring method for use in electrochemistry working station, involves dispersing nano-crystal in non-polar organic solvent    

文献类型:专利

英文题名:Semiconductor nano-crystal lowest unoccupied molecular orbital value and highest occupied molecular orbital value measuring method for use in electrochemistry working station, involves dispersing nano-crystal in non-polar organic solvent

作者:TU S;FU H;HOU X;LUAN W;YUAN B

机构:[1]UNIV EAST CHINA SCI&TECHNOLOGY

申请号:CN102928480-A

申请日:2011-09-29

公开日:2013-02-13

语种:英文

收录:DERWENT

摘要:NOVELTY - The method involves uniformly dispersing semiconductor nano-crystal in non-polar organic solvent to form semiconductor nano-crystal solution. The semiconductor nano-crystal solution is covered on a working electrode (6) of an electrochemical working station (1). A semiconductor nanometer crystal thin film is formed on the working electrode, and the electrochemical working station is used to scan to obtain a cyclic volt-ampere curve for protection of inert gas. Forbidden bandwidth of the semiconductor nanometer crystal is measured according to a specific formula. USE - Method for measuring semiconductor nano-crystal lowest unoccupied molecular orbital (LUMO) value and highest occupied molecular orbital (HOMO) value of an electrochemistry working station. ADVANTAGE - The method enables forming a semiconductor nano-crystalline thin film on a surface of the working electrode, which reduces the experiment materials. The method enables accurately measuring a semiconductor nano-crystal energy band structure, and avoiding the unstable steps for protection of inert gas. DETAILED DESCRIPTION - The electrochemical work station is made of tetrabutyl amine hexafluorophosphate and acetonitrile. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a method for measuring semiconductor nano-crystal LUMO and HOMO value. Electrochemical work station (1) Inert gas outlet pipe (4) Reference electrode (5) Working electrode (6) Adjusting valve (8) Inert gas storage tank (9)

参考文献:

正在载入数据...

版权所有©华东理工大学 重庆维普资讯有限公司 渝B2-20050021-7 
渝公网安备 50019002500408号 违法和不良信息举报中心