文献类型：期刊文献

英文题名：Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

作者：Hou, Ying[1];Lu, Zhaoyue[1];Pu, Tiansong[1];Zhang, Yuan[1];Xu, Guoqiang[2];Xu, Haisheng[1]

机构：[1]E China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China;[2]Kunshan Hisense Elect Co Ltd, Kunshan 215300, Jiangsu, Peoples R China

年份：2013

卷号：102

期号：6

外文期刊名：APPLIED PHYSICS LETTERS

收录：;EI(收录号：20130916063077);WOS:【SCI-EXPANDED(收录号:WOS:000315053300100)】；

基金：This work is supported by the National Natural Science Foundation of China (Contract No. 91123034).

语种：英文

外文关键词：Ferroelectric films - Ferroelectricity - Random access storage - Switching - Fluorine compounds - Electric fields

摘要：The polarization switching behaviors with different pulse processes for ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. The faster switching speed with imprint time is observed for the films with the certain switching and imprint directions. The internal electric fields for these processes are well analyzed, and it is found that the effective fields as well as charge trap states in ferroelectric layers are strongly responsible for the switching behaviors. This result provides an effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792689]