文献类型：期刊文献

中文题名：溅射工艺参数对BST薄膜介电常数的影响

英文题名：Effect of Sputtering Processes on Dielectric Constants of BST Thin Films

作者：林明通[1];肖田[1];楼均辉[1];陈国荣[2];杨云霞[2]

机构：[1]上海广电电子股份有限公司平板中心,上海200081;[2]华东理工大学材料科学与工程学院,上海200237

年份：2005

卷号：24

期号：7

起止页码：58

中文期刊名：电子元件与材料

外文期刊名：Electronic Components And Materials

收录：CSTPCD;;北大核心:【北大核心2004】；CSCD:【CSCD_E2011_2012】；

语种：中文

中文关键词：无机非金属材料;射频磁控溅射;BST薄膜;沉积速率;介电常数

外文关键词：inorganic non-metallic materials; rf magnetron sputtering; BST thin films; dielectric constant

摘要：采用射频磁控溅射法在ITO玻璃基片上制备了约700 nm的Ba03Sr0.5TiO3(BST)薄膜.研究了溅射功率、气压、ψ[O2/(Ar+O2)]比和基片温度对εr的影响,获得各种溅射条件下的薄膜的εr为250～310.提出了较优的工艺,即本底真空1.5×10-3Pa、靶基距6.2 cm、功率300W、气压1.8Pa、ψ[O2/(Ar+O2)]为30%和衬底温度500℃,并研究了薄膜的晶相、组成和形貌.
Ba0.5Sr0.5TiO3(BST)thin films about 700 nm in thickness were prepared by rf magnetron sputtering on ITO-coated glass substrate. The influence of sputtering power, gas pressure, ψ[O2/(Ar+O2)] ratio,and substrate temperature on dielectric constant of the BST thin films was investigated. The dielectric constants under various deposition parameters are between 250~310. The base pressure of 10–3 Pa, substrate-target distance of 6.2 cm, sputtering power of 300 watts, gas pressure of 1.8 Pa, ψ[O2/(Ar+O2)] ratio of 30% and substrate temperature of 500℃ are identified to be a better sputtering process. The crystallinity, composition as well as morphology of the BST film deposited under the better condition was also studied.