详细信息

Energy Band Transition and Voltage Compensation via Surface Stoichiometry Alteration in p-Type Dye-Sensitized Solar Cells  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Energy Band Transition and Voltage Compensation via Surface Stoichiometry Alteration in p-Type Dye-Sensitized Solar Cells

作者:Xin, Chenghao[1,2];Wang, Yu[1,2];Zhang, Shicong[1,2];Xu, Liang[1,2];Yu, Ying[1,2];Xiang, Huaide[1,2];Wu, Wenjun[1,2];Hua, Jianli[1,2]

机构:[1]East China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, Sch Chem & Mol Engn, Inst Fine Chem, 130 Meilong Rd, Shanghai 200237, Peoples R China

年份:2017

卷号:11

期号:10

外文期刊名:PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS

收录:;EI(收录号:20173804173233);WOS:【SCI-EXPANDED(收录号:WOS:000412162000007)】;

基金:This work was financially supported by the NSFC for Creative Research Groups (21421004), the Programme of Introducing Talents of Discipline to Universities (B16017) and the NSFC/China.

语种:英文

外文关键词:dye-sensitized solar cells; energy band transitions; nickle salt; NiO; p-DSSC; stoichiometry

摘要:To fundamentally ameliorate the photovoltaic performances of dye-sensitized solar cells (DSSCs), p-type DSSCs (p-DSSCs) have attracted considerable attention over the last two decades. Herein, by means of a modification with a Ni(NO3)(2) aqueous solution, the stoichiometry of Ni atoms on the surface of a NiO electrode markedly increased. As a result of the change in donor ability and built-in electric field, the quasi-Fermi level and the valence band of the semiconductor were greatly reduced, thus effectively improving the open-circuit voltage of the NiO-film-based photovoltaic device. In addition, the increased short-circuit current density was attributed to the change of the surface distribution state of the sensitizer. Consequently, the power conversion efficiency of the photovoltaic device based on the Ni-salt-modified electrode increased by 35.7% from 0.14 to 0.19% compared to that of the plain electrode. This method opens a new strategy to improve the photovoltaic efficiencies of p-DSSCs.

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