详细信息

Color-Tunable Highly Bright Photoluminescence of Cadmium-Free Cu-Doped Zn-In-S Nanocrystals and Electroluminescence  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Color-Tunable Highly Bright Photoluminescence of Cadmium-Free Cu-Doped Zn-In-S Nanocrystals and Electroluminescence

作者:Zhang, Wenjin[1];Lou, Qing[2];Ji, Wenyu[2];Zhao, Jialong[2];Zhong, Xinhua[1]

机构:[1]E China Univ Sci & Technol, Inst Appl Chem, Shanghai Key Lab Funct Mat Chem, Shanghai 200237, Peoples R China;[2]Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

年份:2014

卷号:26

期号:2

起止页码:1204

外文期刊名:CHEMISTRY OF MATERIALS

收录:;EI(收录号:20140617290238);WOS:【SCI-EXPANDED(收录号:WOS:000330543600040)】;

基金:The work was supported by National Natural Science Foundation of China (No. 21175043), the Science and Technology Commission of Shanghai Municipality (11JC1403100, 12NM0504101, 12ZR1407700), and the Fundamental Research Funds for the Central Universities for financial support.

语种:英文

外文关键词:Electroluminescence - Optoelectronic devices - Cadmium - Nanocrystals - II-VI semiconductors - Copper - Infrared devices - Cadmium compounds - Indium compounds - Semiconductor quantum dots - Photoluminescence

摘要:A series of Cu doped Zn-In-S quantum dots (Cu:Zn-In-S d-dots) were synthesized via a one-pot noninjection synthetic approach by heating up a mixture of corresponding metal acetate salts and sulfur powder together with dodecanethiol in oleylamine media. After overcoating the ZnS shell around the Cu:Zn-In-S d-dot cores directly in the crude reaction solution, the resulting Cu:Zn-In-S/ZnS d-dots show composition-tunable photoluminescence (PL) emission over the entire visible spectral window and extending to the near-infrared spectral window (from 450 to 810 nm), with the highest PL quantum yield (QY) up to 85%. Importantly, the initial high PL QY of the obtained Cu:Zn-In-S/ZnS d-dots in organic media can be preserved when transferred into aqueous media via ligand exchange. Furthermore, electroluminescent devices with good performance (with a maximum luminance of 220 cd m(-2), low turn-on voltages of 3.6 V) have been fabricated with the use of these Cd-free low toxicity yellow-emission Cu:Zn-In-S/ZnS d-dots as an active layer in these QD-based light-emitting diodes.

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