文献类型：期刊文献

中文题名：二维钙钛矿可控外离子输运实现高重复性、低电压阻变

英文题名：Controllable extrinsic ion transport in two-dimensional perovskite films for reproducible,low-voltage resistive switching

作者：郑祎初[1];于东方[1];练辉俊[2];袁海洋[2];周喻[3,4];杨双[2]

机构：[1]Shanghai Univ, Sch Mechatron Engn & Automation, Shanghai 200444, Peoples R China;[2]East China Univ Sci & Technol, Shanghai Engn Res Ctr Hierarch Nanomat, Sch Mat Sci & Engn, Key Lab Ultrafine Mat,Minist Educ, Shanghai 200237, Peoples R China;[3]Cent South Univ, Sch Phys & Elect, Hunan Key Lab Nanophoton & Devices, Changsha 410083, Peoples R China;[4]Cent South Univ, Powder Met Res Inst, Changsha 410083, Peoples R China;[5]Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China

年份：2023

卷号：66

期号：6

起止页码：2383

中文期刊名：Science China Materials

外文期刊名：中国科学（材料科学（英文版）

收录：CSTPCD;;EI(收录号：20231013684227);Scopus;WOS:【SCI-EXPANDED(收录号:WOS:000946011000001)】；CSCD:【CSCD2023_2024】；PubMed;

基金：AcknowledgementsThis work was supported by the National Natural Science Fund for Excellent Young Scholars (52022030), Shanghai Sailing Program (22YF1413100), and Shanghai Fundamental Research Special Zone Projects (22TQ1400100-5).

语种：中文

中文关键词：阻变存储器;介质材料;钙钛矿;限域效应;离子输运;多功能应用;阈值电压;导电细丝;

外文关键词：resistive switching;organic-inorganic halide perovskite;ion migration;grain boundary;space-confined

摘要：有机-无机卤化物钙钛矿作为阻变介质材料在阻变存储器领域引起了极大的兴趣.其离子空间分布和离子输运决定了导电细丝的形成,但目前对这二者的了解有限,且存在随机性与动力学之间的本征矛盾.本文中,我们通过原位及非原位研究,系统地证明了二维钙钛矿薄膜晶界内存在具有空间限域效应的快速外部离子输运通道.通过调控介电层中阳离子输运通道,即晶界的几何形貌特征及结构,可以有效控制导电细丝的生长行为.最终,制备出具有0.09 V(1.8 kV cm^(-1))的超低阈值电压和低离散性(<10%)的免电激励阻变存储器件.该器件可柔性制备并具有多功能应用集成,如多值写入和光擦除功能.该工作可为阻变存储器中导电细丝形成动力学的调控开辟新的思路,并为存储器未来在电子和光子电路中的应用提供可靠的单元原件.
Organic-inorganic halide perovskite has attracted significant interest in being switching medium for resistive random access memory(RRAM),yet the in-depth understanding of ion spatial distribution and transport kinetics—which is responsible for the filament formation and normally suffers from a paradox between stochasticity and dynamics—remains limited.Herein,we show evidence of space-confined,fast extrinsic ion transport within grain boundaries(GBs)of two-dimensional perovskite films through systematic ex-situ and in-situ studies.The filament growth can be dominated by the geometrical feature of GBs that act as the channel for cation transport in the dielectric film.By tailoring the structure of perovskite GBs,electroforming-free RRAM devices are fabricated with an ultralow set voltage of 0.09 V(1.8 kV cm^(-1))and small temporal/spatial variations(10%).The devices can also be integrated with flexible substrates for multifunctional applications,including multilevel writing and light erasing.Our work may open new perspectives for regulating filament formation kinetics in RRAMs and provides a reliable building block for future applications in electronic and photonic circuits.