文献类型：期刊文献

英文题名：Ultralow operating voltage for energy conversion performance in Hf1-xZrxO2 thin fi lms

作者：Hou, Ying[1,2];Wang, Baoyuan[1];Luo, Zhen[3];Du, Xinzhe[3];Wang, Zijian[3];Fang, Yi[1];Li, Xiaoguang[3]

机构：[1]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China;[2]Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China;[3]Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Dept Phys, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China

年份：2024

卷号：10

期号：6

起止页码：1206

外文期刊名：JOURNAL OF MATERIOMICS

收录：;EI(收录号：20253018848808);WOS:【SCI-EXPANDED(收录号:WOS:001289711200001)】；

基金：The authors acknowledge the financial support by National Natural Science Foundation of China (Grant Nos. 52272109, 91963116, and U21A206 ) , National Key Research and Development Program of China (2022YFB3807604) , Natural Science Foundation of Shanghai (Grant No. 19ZR141190 ) , and State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China.r 91963116, and U21A206 6) , National Key Research and Develop-ment Program of China (2022YFB3807604) , Natural Science Foun-dation of Shanghai (Grant No. 19ZR141190 0) , and State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China.

语种：英文

外文关键词：Morphotropic phase boundary state; Electrocaloric cooling; Energy storage; HfO2-based films

摘要：Emerging ferroelectric and antiferroelectric HfO2-based 2-based thin films are attractive candidates for energy conversion and storage applications. In this work, the polar phase transformation between tetragonal and orthorhombic phases associated with ferroelectric or antiferroelectric behaviors is utilized to manipulate the electrocaloric cooling and energy storage performances in Zr-doped, woken up HfO2 2 ultrathin films. A giant electrocaloric temperature change of up to 11.85 K in Hf 0.5 Zr 0.5 O 2 with the morphotropic phase boundary (MPB) state and a high energy storage density of 39.34 J/cm3 3 in the tetragonal phase-dominant Hf 0.25 Zr 0.75 O 2 system are obtained. More interestingly, contrary to over- doping and excessive electric fields, an appropriate Zr concentration of 0.5 and an applicable driving field of 1.91 MV/cm are desired for the electrocaloric effect, resulting in an ultralow operating voltage as low as 1.3 V in this 6.8 nm thick Hf 0.5 Zr 0.5 O 2 film. These findings illustrate that the structural design strategy is a visible method for achieving optimal energy-related behaviors and highlight the great possibilities for building future energy-related devices. (c) 2024 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).