详细信息

New organic semiconductors for thin-film transistors: Synthesis, characterization, and performance of 4H-indeno[1,2-b]thiophene derivatives  ( EI收录)  

文献类型:期刊文献

英文题名:New organic semiconductors for thin-film transistors: Synthesis, characterization, and performance of 4H-indeno[1,2-b]thiophene derivatives

作者:Zhao, Chunchang[1,2]; Chen, Xiaohong[2]; Gao, Cen[2]; Ng, Man-Kit[2]; Ding, Huanjun[3]; Park, Kiwan[3]; Gao, Yongli[3]

机构:[1] School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai, 200237, China; [2] Department of Chemistry, University of Rochester, Rochester, NY 14627, United States; [3] Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, United States

年份:2009

卷号:159

期号:11

起止页码:995

外文期刊名:Synthetic Metals

收录:EI(收录号:20092212103587)

语种:英文

外文关键词:X ray photoelectron spectroscopy - Thiophene - Field effect transistors - Charge injection - Ultraviolet photoelectron spectroscopy - Electron injection - Thin film transistors - Organometallics - Thin film circuits - X ray diffraction - Oligomers - Thin films

摘要:Three new hybrid polycyclic aromatic 4H-indeno[1,2-b]thiophene derivatives (DIT-nT) were readily synthesized and characterized. Ultraviolet photoelectron spectroscopy (UPS) and inverse photoemission spectroscopy (IPES) study shows that the gap energies of these oligothiophene derivatives are dependent on the effective π-conjugation length of the molecules, with decreasing gap energies while the conjugated length is increased. More importantly, the hole injection barrier obtained from UPS and IPES studies decreases significantly at the metal-organic interface as the effective π-conjugation length of the molecules increases. Hence, the hole injection into DIT-2T is expected to be more facile than that into DIT-0T due to the smaller barrier. X-ray diffraction examination revealed that thin films are highly ordered, with the long axes of the molecules nearly perpendicular to the surface. The field-effect transistor (FET) devices based on the three oligomers show good p-type performance with high hole mobilities, and the highest value (0.014 cm2 V-1 s-1) was obtained for the longest oligomer DIT-2T. ? 2009 Elsevier B.V. All rights reserved.

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