文献类型：期刊文献

英文题名：The multiscale simulation of metal organic chemical vapor deposition growth dynamics of GaInP thin film

作者：Hu GuiHua[1];Yu Tao[2,3]

机构：[1]E China Univ Sci & Technol, Minist Educ, Key Lab Adv Control & Optimizat Chem Proc, Shanghai 200237, Peoples R China;[2]Shanghai Univ, CIMS, Shanghai 200072, Peoples R China;[3]Shanghai Univ, Robot Ctr, Shanghai 200072, Peoples R China

年份：2010

卷号：53

期号：8

起止页码：1481

外文期刊名：SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY

收录：;EI(收录号：20103313154157);WOS:【SCI-EXPANDED(收录号:WOS:000280477200016)】；

基金：This work was supported by the National Natural Science Foundation of China (Grant No. 60706014), the National Science Fund for Distinguished Young Scholars (Grant No. 60625302), the National Natural Science Foundation of China (General Program) (Grant No. 2009CB320603), the National High-Tech Research and Development Program of China (Grant No. 2009AA04Z159), and the Shanghai Leading Academic Discipline Project (Grant No. B504).

语种：英文

外文关键词：metal organic chemical vapor deposition; computational fluid dynamics; kinetic Monte Carlo; virtual reality; multiscale simulation; GaInP thin film growth

摘要：As a Group III-V compound, GaInP is a high-efficiency luminous material. Metal organic chemical vapor deposition (MOCVD) technology is a very efficient way to uniformly grow multi-chip, multilayer and large-area thin film. By combining the computational fluid dynamics (CFD) and the kinetic Monte Carlo (KMC) methods with virtual reality (VR) technology, this paper presents a multiscale simulation of fluid dynamics, thermodynamics, and molecular dynamics to study the growth process of GaInP thin film in a vertical MOCVD reactor. The results of visualization truly and intuitively not only display the distributional properties of the gas' thermal and flow fields in a MOCVD reactor but also display the process of GaInP thin film growth in a MOCVD reactor. The simulation thus provides us with a fundamental guideline for optimizing GaInP MOCVD growth.