详细信息

Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage  ( SCI-EXPANDED收录)  

文献类型:期刊文献

英文题名:Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage

作者:Gao, Kai[1,2,3];Li, Wei[2,3];Wang, Xiaoyang[4];Sun, Sai[1];Zhang, Bin[2,3]

机构:[1]Sinopec Shanghai Res Inst Petrochem Technol, Shanghai 201208, Peoples R China;[2]East China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[3]East China Univ Sci & Technol, Sch Chem & Mol Engn, Joint Int Res Lab Precis Chem & Mol Engn, Shanghai 200237, Peoples R China;[4]Guilin Univ Elect Technol, Engn Res Ctr Elect Informat Mat & Devices, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China

年份:2023

卷号:28

期号:17

外文期刊名:MOLECULES

收录:;WOS:【SCI-EXPANDED(收录号:WOS:001061165900001)】;

基金:The authors acknowledge the financial support from the National Natural Science Foundation of China (51973061), Shanghai Rising-Star Program (21QA1402100), and the National Natural Science Foundation of Shanghai (23ZR1416900).

语种:英文

外文关键词:aggregation-induced emission; reduced graphene oxide; surface modification; information storage

摘要:Reduced graphene oxide (RGO) has been extensively studied and applied in optoelectronic systems, but its unstable dispersion in organic solvents has limited its application. To overcome this problem, the newly designed and developed aggregation-induced emission (AIE) material poly[(9,9-bis(6-azidohexyl)-9H-fluorene)-alt-(9-(4-(1,2,2-triphenylvinyl)phenyl)-9H-carbazole)] (PAFTC) was covalently grafted onto RGO to produce (PFTC-g-RGO). The solubility of two-dimensional graphene was improved by incorporating it into the backbone of PAFTC to form new functional materials. In resistive random access memory (RRAM) devices, PFTC-g-RGO was used as the active layer material after it was characterized. The fabricated Al/PFTC-g-RGO/ITO device exhibited nonvolatile bistable resistive switching performances with a long retention time of over 104 s, excellent endurance of over 200 switching cycles, and an impressively low turn-ON voltage. This study provides important insights into the future development of AIE polymer-functionalized nanomaterials for information storage.

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