文献类型：期刊文献

英文题名：Effects of melting temperature on the broadband infrared luminescence of bi-doped and Bi/Dy co-doped chalcohalide glasses

作者：Yang, Guang[1]; Chen, Danping[2]; Ren, Jing[1]; Xu, Yingsheng[1]; Zeng, Huidan[1]; Yang, Yunxia[1]; Chen, Guorong[1]

机构：[1]E China Univ Sci & Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Ultrafine Mat, Shanghai 200237, Peoples R China;[2]Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

年份：2007

卷号：90

期号：11

起止页码：3670

外文期刊名：JOURNAL OF THE AMERICAN CERAMIC SOCIETY

收录：;EI(收录号：20074610920289);WOS:【SCI-EXPANDED(收录号:WOS:000250762100051)】；

语种：英文

外文关键词：Bismuth - Chalcogenides - Luminescence - Melting point - Metal ions

摘要：Bismuth (Bi)-doped and Bi/Dy co-doped chalcohalide glasses are investigated as promising materials for amplifiers in optical communication. The samples synthesized at lower melting temperatures (MTs) are characterized by more intensified infrared emissions. With respect to the redox process of a liquid mixture at different MTs, we attribute an emission at 1230 nm to low-valent Bi ions. The lower MT favors the formation of LVB ions, i.e. Bi+ or Bi2+, while the higher MT promotes the production of higher-valent Bi ions Bi3+. An enhanced broadband infrared luminescence with the full-width at half-maximum over 200 nm is achieved from the present Bi/Dy co-doped chalcohalide glasses.