文献类型：期刊文献

英文题名：Effect of post-deposition annealing on atomic layer deposited SiO2 film for silicon surface passivation

作者：Li, Shizheng[1];Xu, Jiahui[1];Wang, Liangxing[2];Yang, Ning[1];Ye, Xiaojun[1];Yuan, Xiao[1];Xiang, Haitao[3];Liu, Cui[1];Li, Hongbo[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Shanghai Tech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China;[3]Jolywood SuZhou Sunwatt Co Ltd, Changshu 215542, Jiangsu, Peoples R China

年份：2020

卷号：106

外文期刊名：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录：;EI(收录号：20194207538237);WOS:【SCI-EXPANDED(收录号:WOS:000499708800012)】；

基金：This work was supported by the Shanghai Municipal Project (17DZ1201102). The authors would like to thank the Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences for the corona charging measurement.

语种：英文

外文关键词：Atomic layer deposition; Silicon dioxide; Surface passivation; Positive fixed charge

摘要：We have investigated the passivation performance of atomic layer deposited silicon dioxide (ALD-SiO2) films on crystalline silicon surface with various post-annealing temperatures. A maximum effective lifetime of 2157 us can be achieved at the optimized annealing temperature of 650 degrees C on 3 Omega cm n-type silicon wafers. The improved passivation quality can be attributed to the low interface defect density and extremely high positive fixed charge density. Especially, the high positive fixed charge density of over 4 x 10(12) CM-2 can be observed after annealing at high temperature. Therefore, it is inferred that the passivation mechanism for ALD-SiO2 films is based on not only chemical passivation but also field-effect passivation, which is more similar with the ALD-Al2O3 films rather than the thermally grown SiO2 films. X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and thermal effusion measurement revealed the variation of elements content and distribution of silicon, oxygen, hydrogen and carbon during the post-deposition thermal treatment process, indicating that the rearrangement and release of these elements create more oxygen vacancies and result in the improvement of interface quality and positive fixed charge density of ALD-SiO2 films.