详细信息

Facile preparation of novel Cu-Zn-S film by spray pyrolysis  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Facile preparation of novel Cu-Zn-S film by spray pyrolysis

作者:Xu, Xiaojun[1];Chen, Qinmiao[1];Yuan, Hongcun[2];Yi, Ni[1];Chen, Jin[1];Zhu, Xifang[2];Yamaguchi, Yoshinori[1,3];Dou, Xiaoming[1]

机构:[1]East China Univ Sci & Technol, Coll Sci, Dept Phys, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]Changshu Inst Technol, Coll Elect & Optoelect Engn, Changzhou 213002, Peoples R China;[3]Osaka Univ, Grad Sch Engn, Dept Appl Phys, Suita, Osaka 5650871, Japan

年份:2017

卷号:28

期号:23

起止页码:18085

外文期刊名:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录:;EI(收录号:20173504092979);WOS:【SCI-EXPANDED(收录号:WOS:000414376300080)】;

基金:The project was supported by the National Natural Science Foundation (No. 11604097), the Fund of East China University of Science and Technology (No. YK0142119), the Natural Science Foundation of Jiangsu Province (No. BK20141167) and the Research Foundation for Changzhou Institute of Modern Optoelectronic Technology of China (No. CZGY20).

语种:英文

外文关键词:Chlorine compounds - Thin film solar cells - Thin films - Tin compounds - Energy dispersive spectroscopy - Film preparation - Infrared spectroscopy - Zinc compounds - Photovoltaic effects - Scanning electron microscopy - Copper compounds - X ray diffraction

摘要:In this work, novel Cu-Zn-S (CZS) thin film for solar cell was successfully synthesized using a facile preparation method of spray pyrolysis. Copper (II) chloride dihydrate, zinc(II) acetate dihydrate and thiourea were used as reagents. The effect of varying the substrate temperature for the spray in terms of structural, optical, compositional, morphological and photovoltaic properties of the fabricated CZS film was investigated via X-ray diffraction, ultraviolet-visible-infrared spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy and J-V tester, respectively. As observed from the results, our novel CZS thin films have good crystallinity phase with bandgap of 2.21 eV and a conversion efficiency of 0.84% under optimal condition.

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