文献类型：期刊文献

英文题名：Preparation and Memory Performance of a Nanoaggregated Dispersed Red 1-Functionalized Poly (N-vinylcarbazole) Film via Solution-Phase Self-Assembly

作者：Zhuang, Xiao-Dong[1];Chen, Yu[1];Liu, Gang[2];Zhang, Bin[1];Neoh, Koon-Gee[2];Kang, En-Tang[2];Zhu, Chun-Xiang[3];Li, Yong-Xi[1];Niu, Li-Juan[1]

机构：[1]E China Univ Sci & Technol, Inst Appl Chem, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 119260, Singapore;[3]Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

年份：2010

卷号：20

期号：17

起止页码：2916

外文期刊名：ADVANCED FUNCTIONAL MATERIALS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000282288600019)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (20876046), the Ministry of Education of China (309013), the Fundamental Research Funds for the Central Universities, the Shanghai Municipal Educational Commission for the Shuguang fellowship (08GG10), and the Shanghai Eastern Scholarship. X. D. Zhuang especially thanks Miss Mengzi Shen Liang for drawing the proposed structure

语种：英文

摘要：A nanoaggregated dispersed red 1-grafted poly(N-vinylcarbazole) (abbreviated PVDR) is self-assembled via pi-pi stacking interactions of the carbazole groups in the polymer system after adding a solution of PVDR in N,N-dimethylformamide to dichloromethane. Upon self-assembly, the nanoaggregated PVDR film displays helical columnar stacks with large grain sizes, whereas a non-aggregated PVDR film exhibits an amorphous morphology with smaller grain size. A write-once read-many-times (WORM) memory device is shown whereby a pre-assembled solution of PVDR is spin-coated as the active layer and is sandwiched between an aluminum electrode and an indium-tin-oxide (ITO) electrode. This device shows very good memory performance, with an ON/OFF current ratio of more than 10(5) and a low misreading rate through the precise control of the ON and OFF states. The stability of the nanoaggregated PVDR device is much higher than that of the non-nanoaggregated PVDR device. This difference in device stability under constant voltage stress can be mainly attributed to the difference in the film crystallinity and surface morphology. No degradation in current density was observed for the ON-and OFF-states after more than one hundred million (10(8)) continuous read cycles indicating that both states were insensitive to the read cycles. These results render the nanoaggregated PVDR polymer as promising components for high-performance polymer memory devices.