文献类型：期刊文献

英文题名：Modeling and simulation of silicon epitaxial growth in Siemens CVD reactor

作者：Ni, Haoyin[1];Lu, Shijie[1];Chen, Caixia[1]

机构：[1]E China Univ Sci & Technol, Minist Educ, Key Lab Coal Gasificat & Energy Chem Engn, Shanghai 200237, Peoples R China

年份：2014

卷号：404

起止页码：89

外文期刊名：JOURNAL OF CRYSTAL GROWTH

收录：;EI(收录号：20143100002522);WOS:【SCI-EXPANDED(收录号:WOS:000341414600017)】；

基金：This work is supported in part by the China's National Science Foundation (NSFC) under Grants 21276085 and 20876049, and the Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd., China.

语种：英文

外文关键词：Computer simulations; Growth models; Fluid flows; Chemical vapor deposition processes; Semiconducting silicon

摘要：Siemens CVD reactor is an important chemical device for the production of polysilicon. The chemical and physical phenomenon involved in the reactor is very complex. Understanding the multispecies thermal fluid transport and its interaction with the gas/surface reactions is crucial for an optimal design and operation of the reactor. In the present paper, a mathematical model was constructed to describe the fluid dynamics, the heat and mass transfer and the reaction kinetics of the epitaxial growth process in industrial CVD reactors. A modified reaction kinetics model was used to represent the gas phase and surface reactions. The kinetics model was validated using the published experimental data obtained in a temperature range similar to the industrial CVD processes of silicon productions. The epitaxial growth of silicon in a Siemens reactor was simulated using commercial Computational Fluid Dynamics (CFD) software ANSYS FLUENT. The distributions of gas velocity, temperature and species concentrations in the reactor were predicted numerically. Based on the numerical simulation results, a sensitivity analysis was carried out to determine the key factors influencing the growth rate in industrial CVD reactors. Under the conditions of fixed heating power applied to three different rod diameters of 50 mm, 80 mm and 100 mm, the simulated results show, when the rods diameter is 50 mm, the surface temperature is high and the gas temperature is low, the growth rate of silicon is determined by the transport of gas species. When the rods' diameter increases to 80 mm, the averaged surface temperature decreases to 1361 K, the surface reaction rate and transport of gas species control the growth rate of Si together. When the rods' diameter is 100 mm, the surface temperature decreases further, the rates of surface reactions become the control factor of deposition rate of Si. (C) 2014 Elsevier B.V. All rights reserved.