文献类型：期刊文献

英文题名：Tuning Electrons Migration of Dual S Defects Mediated MoS2-x/ZnIn2S4-x Toward Highly Efficient Photocatalytic Hydrogen Production

作者：Zheng, Yifan[1,2];Wang, Yu[1,3];Mansoor, Seemal[1,2];Hu, Zixu[1,3];Zhang, Yuxin[1,3];Liu, Yongdi[3];Zhou, Liang[1,3,4,5,6];Lei, Juying[1,3,5];Zhang, Jinlong[1,2]

机构：[1]East China Univ Sci & Technol, Shanghai Engn Res Ctr Multimedia Environm Catalysi, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, Key Lab Adv Mat & Joint Int Res, Lab Precis Chem & Mol Engn, Feringa Nobel Prize Scientist Joint Res Ctr,Sch Ch, 130 Meilong Rd, Shanghai 200237, Peoples R China;[3]East China Univ Sci & Technol, Natl Engn Res Ctr Ind Wastewater Detoxicat & Resou, Sch Resources & Environm Engn, 130 Meilong Rd, Shanghai 200237, Peoples R China;[4]Kyoto Univ, Dept Mol Engn, Nishikyo Ku, Kyoto 6158510, Japan;[5]Shanghai Inst Pollut Control & Ecol Secur, Shanghai 200092, Peoples R China;[6]Harbin Inst Technol, State Key Lab Urban Water Resource & Environm, Harbin 150090, Peoples R China

年份：2024

卷号：20

期号：33

外文期刊名：SMALL

收录：;EI(收录号：20241415841256);WOS:【SCI-EXPANDED(收录号:WOS:001194210900001)】；

基金：This work was supported by the National Key Research and Development Program of China (2022YFB3803600 and 2022YFE0107900), the National Natural Science Foundation of China (22006038 and 21972040), the Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-02-E00106), the Science and Technology Commission of Shanghai Municipality (22230780200 and 20DZ2250400), the Fundamental Research Funds for the Central Universities (222201717003) and the Open Project of State Key Laboratory of Urban Water Resource and Environment (Grant no. QA202319).

语种：英文

外文关键词：defect engineering; photocatalytic H-2 production; S defect; ZnIn2S4-MoS2

摘要：Photocatalytic hydrogen production is a prevalent method for hydrogen synthesis. However, high recombination rate of photogenerated carriers and high activation energy barrier of H remain persistent challenge. Here, the two-step hydrothermal method is utilized to prepare dual S-defect mediated catalyst molybdenum sulfide/zinc indium sulfide (MSv/ZISv), which has high hydrogen production rate of 8.83 mmol g(-1)h(-1) under simulated sunlight. The achieved rate is 21.91 times higher than pure ZnIn2S4 substrate. Defects in ZIS within MSv/ZISv modify the primitive electronic structure by creating defect state that retaining good reducing power, leading to the rapid separation of electron-hole pairs and the generation of additional photogenerated carriers. The internal electric field further enhances the migration toward to cocatalyst. Simultaneously, the defects introduced on the MoS2 cause electron rearrangement, leading to electron clustering on both S vacancies and edge S. Thereby MSv/ZISv exhibits the lowest activation energy barrier and |Delta GH*|. This work explores the division of synergies between different types of S defects, providing new insights into the coupling of defect engineering.