文献类型：期刊文献

英文题名：Layer-Locked Anomalous Valley Hall Effect in Two-Dimensional A-Type Tetragonal Antiferromagnetic Insulator

作者：Guo, San-Dong[1]; Xu, Wei[2]; Xue, Yang[3]; Zhu, Gangqiang[4]; Ang, Yee Sin[5]

机构：[1] School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an, 710121, China; [2] State Key Laboratory of Surface Physics, Key Laboratory of Computational Physical Sciences, MOE, Department of Physics, Fudan University, Shanghai, 200433, China; [3] Department of Physics, East China University of Science and Technology, Shanghai, 200237, China; [4] School of Physics and Electronic Information, Shaanxi Normal University, Shaanxi, Xi’an, 716000, China; [5] Science, Mathematics and Technology [SMT] Cluster, Singapore University of Technology and Design, Singapore, 487372, Singapore

年份：2023

外文期刊名：arXiv

收录：EI(收录号：20230427375)

语种：英文

外文关键词：Antiferromagnetism - Bromine compounds - Electric fields - Energy efficiency - Iron compounds - Landforms - Magnesium compounds - Quantum Hall effect - Spin Hall effect

摘要：Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed matter physics and device enginering. Here we propose a route to achieve AVHE in A-type AFM insulator composed of vertically-stacked monolayer quantum anomalous Hall insulator (QAHI) with strain and electric field modulations. Uniaxial strain and electric field generate valley polarization and spin splitting, respectively. Using first-principles calculations, Fe2BrMgP monolayer is predicted to be a prototype A-type AFM hosting valley-polarized quantum spin Hall insulator (VQSHI) in which AVHE and quantum spin Hall effect (QSHE) are synergized in a single system. Our findings reveal a route to achieve multiple Hall effects in 2D tetragonal AFM monolayers. Copyright ? 2023, The Authors. All rights reserved.