文献类型：期刊文献

英文题名：Polyfluorene-Based Push-Pull Type Functional Materials for Write-Once-Read-Many-Times Memory Devices

作者：Zhuang, Xiao-Dong[1];Chen, Yu[1];Li, Bi-Xin[2];Ma, Dong-Ge[2];Zhang, Bin[1];Li, Yongxi[1]

机构：[1]E China Univ Sci & Technol, Inst Appl Chem, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

年份：2010

卷号：22

期号：15

起止页码：4455

外文期刊名：CHEMISTRY OF MATERIALS

收录：;EI(收录号：20103213128584);WOS:【SCI-EXPANDED(收录号:WOS:000280609800017)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (20876046), the Ministry of Education of China (309013), the Fundamental Research Funds for the Central Universities, the Shanghai Municipal Educational Commission for the Shuguang fellowship (08GG10) and the Shanghai Eastern Scholarship.

语种：英文

外文关键词：Polymer films - Functional materials - Chlorine compounds - Semiconducting films - Ionization potential - Molecular orbitals

摘要：A highly soluble polyfluorene-based copolymer containing electron-rich triphenylamine (TPA) and electron-poor 9,9-bis(3,4-bis(3,4-dicyanophenoxy)phenyl side chains in the C-9 position of the fluorene unit was synthesized under Yamamoto conditions. By applying 306 nm as excitation wavelength, the resultant polymer exhibits strong photoluminescence with maximum emission peaks centered at 413 and 433(sh) nm in chloroform. The calculated highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO), energy bandgap, ionization potential, and electron affinity are -5.66, -3.44, 2.22, 5.92, and 3.70 eV, respectively. The as-fabricated polymer film exhibited typical stable write-once-read-many-times (WORM) memory characteristics, which are desirable for ultralow-cost permanent storage of digital images. The currents in both ON and OFF states did not show any degradation, suggesting good device stability. The ON/OFF current ratio observed in the sweep I-Vcharacteristics at +1.0 V is 6.1 x 10(3). The conduction mechanism through ITO/polymer/Al device is discussed.