文献类型：期刊文献

中文题名：GDARE法制备不同厚度ZnO薄膜的热电性质

英文题名：Thermoelectric Property of Different Thickness ZnO Films Grown by Gas Discharge Activated Reaction Evaporation

作者：孙海涛[1];李成武[1];陆慧[1];方彬[2];林贤[1];王艳南[3];潘孝仁[1]

机构：[1]华东理工大学物理系,上海200237;[2]华东理工大学核物理研究所,上海200237;[3]华东理工大学材料科学与工程学院,上海200237

年份：2011

卷号：31

期号：3

起止页码：292

中文期刊名：真空科学与技术学报

外文期刊名：Chinese Journal of Vacuum Science and Technology

收录：CSTPCD;;EI(收录号：20112514079144);Scopus;北大核心:【北大核心2008】；CSCD:【CSCD_E2011_2012】；

语种：中文

中文关键词：氧化锌薄膜;结构;温差电动势率;电阻率

外文关键词：Zinc oxide thin film; Structure; Thermoelectric power; Resistivity

摘要：以气体放电活化反应蒸发（GDARE）沉积法通过多次沉积制备不同厚度ZnO薄膜。原子力显微镜和X射线衍射测试分析表明,所得ZnO薄膜具有纳米颗粒多晶结构,粒径在30~70 nm,晶粒尺寸随薄膜厚度增加而增大,不同厚度的薄膜均具有高度的c轴取向性。由GDARE法沉积的ZnO薄膜具有较高的温差电动势率S（Seebeck系数）,厚度200 nm的薄膜在440K附近S可达600μV/K。相同温度下,薄膜的温差电动势率S与电阻率ρ均随着膜厚的增加而减小。在考察了薄膜电阻率与温差电动势率的综合影响后,得到在440 K附近,厚度为600 nm的ZnO薄膜具有相对最优秀的热电性能。讨论了ZnO薄膜的表面电传导过程及温差电动势产生机制。
The ZnO films were deposited by gas discharge activated reaction evaporation（GDARE） on glass substrates.The impacts of the deposition conditions on its thermoelectric property were studied.The microstructures of the films were characterized with X-ray diffraction and atomic force microscopy.The results show that the film thickness strongly affects its microstructures and properties.For instance,as the thickness of the films increased,the nano-grains with size varying from 30～70 nm grew and exhibit a preferred growth orientation,along the c-axis normal to the surface.All the ZnO films have fairly high thermoelectric power;at 440 K,Seebeck coefficient,S,of a 200 nm thick ZnO films was found to be 600 μV/K.At a given temperature,its resistivity,ρ,and its Seebeck coefficient,S,decreased with an increase of the thickness.At 440 K,the 600 nm thick ZnO film possesses the best thermoelectric property.Possible mechanism was also discussed.