详细信息

Cu-10Cr-0.4Zr原位复合材料的微观组织与性能  ( EI收录)  

Microstructures and properties of Cu-10Cr-0.4Zr In-situ composites

文献类型:期刊文献

中文题名:Cu-10Cr-0.4Zr原位复合材料的微观组织与性能

英文题名:Microstructures and properties of Cu-10Cr-0.4Zr In-situ composites

作者:邓鉴棋[1];张修庆[1];尚淑珍[1];赵祖欣[1];叶以富[1]

机构:[1]华东理工大学机械工程学院,承压系统安全科学教育部重点实验室,上海200237

年份:2009

卷号:40

期号:11

起止页码:1825

中文期刊名:功能材料

外文期刊名:Journal of Functional Materials

收录:CSTPCD;;EI(收录号:20095312587800);Scopus;北大核心:【北大核心2008】;CSCD:【CSCD2011_2012】;

基金:上海市纳米科技专项计划资助项目(0432nm036);上海市重点学科建设资助项目(B503)

语种:中文

中文关键词:Cu-10Cr-0.4Zr;铜基原位复合材料;强度;电导率

外文关键词:Cu-10Cr-0. 4Zr; Cu-based in-situ composites; strength; eleetricial conductivity

摘要:制备了Cu-10Cr和Cu-10Cr-0.4Zr合金,并经冷变形形成了原位复合材料,观察了Zr的添加对合金铸态组织、复合材料的纤维形貌,研究了Zr的添加和冷变形率对拉伸强度以及导电率的影响。研究表明,在Cu-10Cr合金中添加的0.4%Zr,Cr析出相的直径由15~80μm细化到10~20μm;在相同的冷拔应变下,Cu-10Cr-0.4Zr复合材料较Cu-10Cr材料具有了更高的基体晶格阻力、更加细小均匀的纤维相以及纤维间距,使得Cu-10Cr-0.4Zr复合材料的强度更高。当冷拔应变达到6.2时,Cu-10Cr-0.4Zr原位复合材料抗拉强度高达1089MPa,而Cu-10Cr材料的抗拉强度仅为887MPa。在相同冷拔应变下,Cu-10Cr材料的导电率比Cu-10Cr-0.4Zr材料中的导电率略高。随着材料冷拔应变的增加,决定复合材料电阻率的基体材料内位错散射电阻转变成界面散射电阻,复合材料的电导率逐渐下降。
The Cu-10Cr alloy, Cu-10Cr-0.4Zr alloy and the in-situ composite based on the alloy were prepared. Microstructures of as-cast, evolution of filaments, strength and electrical conductivity of Cu-10Cr and Cu-10Cr- 0.4Zr in-situ composites have been investigated. The results show that the addition of 0. 4wt% Zr in the Cu- 10wt%Cr gives birth to smaller as-cast Cr dendrites, their diameters were reduced from 15-80vm to 10-20μm; at the same draw ratio, Cu-10Cr-0.4Zr composites have larger intrinsic friction stress, finer filaments and spacing between the filaments than Cu-10Cr composites, and the ultimate strength of Cu-10Cr-0.4Zr composites reaches 1089MPa at draw ratio of r/=6.2, however that of the same processed Cu-10Cr is only 887MPa; and at the same draw ratio, the electrical conductivity of Cu-10Cr composites is little higher than that of Cu-10Cr-0.4Zr composites, the decreasing electrical conductivity is caused by the transition of resistivity contribution from dislocation scattering to interface scattering in the Cu matrix.

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